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CM1200HC-50H

Mitsubishi Electric

IGBT

www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM1200HC-50H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Tra...


Mitsubishi Electric

CM1200HC-50H

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www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM1200HC-50H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HC-50H q IC ................................................................ 1200A q VCES ....................................................... 2500V q Insulated Type q 1-element in a Pack q AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 57 ±0.1 190 ±0.5 171 ±0.1 57 ±0.1 57 ±0.1 6 - M8 NUTS C 20 –0.2 +0.1 C C C G E 124 ±0.1 140 ±0.5 40 ±0.2 C C C E E E CM C E E E CIRCUIT DIAGRAM E G 20.25 ±0.2 41.25 ±0.3 3 - M4 NUTS 79.4 ±0.3 61.5 ±0.3 screwing depth min. 7.7 8 - φ7 ±0.1 MOUNTING HOLES screwing depth min. 16.5 61.5 ±0.3 13 ±0.2 15 ±0.2 40 ±0.3 5.2 ±0.2 5 ±0.15 LABEL HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 29.5 ±0.5 38 +1 0 28 +1 0 MITSUBISHI HVIGBT MODULES CM1200HC-50H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width VGE = 0V, Tj = 25°C VC...




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