www.DataSheet4U.com
MITSUBISHI HVIGBT MODULES
CM1200HC-50H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Tra...
www.DataSheet4U.com
MITSUBISHI HVIGBT MODULES
CM1200HC-50H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar
Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CM1200HC-50H
q IC ................................................................ 1200A q VCES ....................................................... 2500V q Insulated Type q 1-element in a Pack q AISiC Baseplate
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57 ±0.1
190 ±0.5 171 ±0.1 57 ±0.1
57 ±0.1
6 - M8 NUTS C
20 –0.2
+0.1
C
C
C
G E
124 ±0.1 140 ±0.5 40 ±0.2
C
C
C
E
E
E
CM C
E
E
E
CIRCUIT DIAGRAM
E
G
20.25 ±0.2 41.25 ±0.3 3 - M4 NUTS 79.4 ±0.3 61.5 ±0.3
screwing depth min. 7.7
8 - φ7 ±0.1 MOUNTING HOLES
screwing depth min. 16.5
61.5 ±0.3 13 ±0.2
15 ±0.2 40 ±0.3 5.2 ±0.2
5 ±0.15
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar
Transistor) Modules
Jul. 2005
29.5 ±0.5
38 +1 0
28 +1 0
MITSUBISHI HVIGBT MODULES
CM1200HC-50H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar
Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
MAXIMUM RATINGS
Symbol VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width VGE = 0V, Tj = 25°C VC...