Hight Bright Surface Mounting Chip LED
Ultra Hight Bright Surface Mounting Chip
InGaAIP J Type
LED
Unit: mm
Conventional Part No.
Global Prat No.
Lightin...
Description
Ultra Hight Bright Surface Mounting Chip
InGaAIP J Type
LED
Unit: mm
Conventional Part No.
Global Prat No.
Lighting Color
1.0 ± 0.2 C0.5 1
LNJ451C44RA ·········· LNJ451C44RA ········· Amber LNJ851C48RA ·········· LNJ851C48RA ········· Orange
3.0 ± 0.2
0.7 ± 0.3
1
s Adsolute Maximum Ratings (Ta = 25°C) Lighting Color PD(mW) IF(mA) IFP(mA)∗ VR(V) Topr(°C) Tstg(°C) Amber 50 20 60 4 −25 ∼ +80 −30 ∼ +85 Orange 50 20 60 4 −25 ∼ +80 −30 ∼ +85
IFP. duty 10% Pulse width 1 msec. The condition of IFP is duty 10%, Pulse width 1 msec
3.2 ± 0.2
2 1.6 ± 0.2 2.0 ± 0.2
0.5 ± 0.2 1.1 ± 0.2 1.4Max
2
1: Anode 2: Cathode
s Electro−Optical Characteristics (Ta = 25°C) Conventional Lighting Part No. Color LNJ451C44RA Amber LNJ851C48RA Orange Unit − Lens Color Clear Clear − IO Typ 14.5 9.0 mcd Min 5.5 3.5 mcd IF 10 10 mA Typ 2.0 1.9 V VF Max 2.3 2.3 V λP Typ 595 620 nm ∆λ Typ 15 17 nm IR IF 10 10 mA Max 100 100 µA VR 4 4 V
IO IF
30
C4 4R A
IF VF
100
IO Ta
Relative Luminous Intensity
500 300
10
50
LN J85 1C 48 RA
Luminous Intensity
5 3
L
NJ
1 45
10 1 5 0.5 0.3 3
44R
LN
J8
51
C
R 48
A
30
A
J45
1C
100 50 30
0.1 1
3
5
10
30
50 100
300
1
LN
LNJ8 51C4 8RA LNJ4 51C4 4RA
1.6
1.8
2.0
2.2
2.4
10 −20
0
20
40
60
80
100
Forward Current
Forward Voltage
Ambient Temperature
Relative Luminous Intensity Wavelength Characteristics
Relative Luminous Intensity
100 80 60 40 20 0 500 40° 50° 60° 70° 80° 600 700 800 90° 100 80 60 40 20 LNJ851C48RA
IF ...
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