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HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) M...
www.DataSheet4U.com
PRE
HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar
Transistor) Modules INSULATED TYPE
on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som
AR LIMIN
Y
MITSUBISHI HVIGBT MODULES
CM2400HC-34H
CM2400HC-34H
q IC ................................................................ 2400A q VCES ....................................................... 1700V q Insulated Type q 1-element in a pack q AISiC base plate
APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57 ±0.25
190 171 57 ±0.25
57 ±0.25
6 - M8 NUTS C
C
C
C
G E
124 ±0.25 140
C
C
C
40
20
E
E
E
CM C
E
E
E
CIRCUIT DIAGRAM
E
G
20.25 41.25 3 - M4 NUTS 79.4 61.5 13 61.5 5.2
38
8 - φ7MOUNTING HOLES
15 40
HVIGBT MODULES (High Voltage Insulated Gate Bipolar
Transistor Modules)
5
LABEL
29.5
28
Mar. 2003
PRE
on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som
AR LIMIN
Y
MITSUBISHI HVIGBT MODULES
CM2400HC-34H
HIGH POWER SWITCHING USE INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar
Transistor) Modules
MAXIMUM RATINGS (Tj = 25°C)
Symbol VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temp...
