CPH6520

www.DataSheet4U.com Ordering number : ENN7475 CPH6520 PNP Epitaxial Planar Silicon Composite Transistor CPH6520 Low-Frequency General-Purpose Amplifier, Drivers Applications Features Package Dimensions unit : mm 2212 [CPH6520] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg 1unit Conditions 0.7 0.9 0.2 3 0.95 0.6 Composite type with 2 transistors contained in the CPH package currently in use, improving the mounting efficiency greatly. The CPH6520 is formed with two chips, being equivalent to the 2SA1813, placed in one package. Adoption of FBET process. High DC current gain (hFE=500 to 1200). High VEBO (VEBO≥15V). Excellent in thermal equilibrium and pair capability. 1 : Base 1 2 : Emitter 1 3 : Collector 2 4 : Emitter 2 5 : Base 2 6 : Collector 1 SANYO : CPH6 Ratings -30 -25 -15 --150 --300 -30 350 500 150 --55 to +150 Unit V V V mA mA mA mW mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Symbol ICBO IEBO hFE hFE (small/large) Conditions VCB=-20V, IE=0 VEB=-10V, IC=0 VCE=-5V, IC=--1mA VCE=-5V, IC=--1mA Ratings min typ max --0.1 --0.1 500 ...