CPH6521

www.DataSheet4U.com Ordering number : ENN7400 CPH6521 PNP/NPN Epitaxial Planar Silicon Composite Transistors CPH6521 Low-Frequency General-Purpose Amplifier, Drivers Applications Features Package Dimensions unit : mm 2187 [CPH6521] 6 5 4 Composite type with 2 transistors contained in the CPH package currently in use, improving the mounting efficiency greatly. The CPH6521 is formed with two chips, being equivalent to the 2SA1813 / 2SC3689, placed in one package. Adoption of FBET process. High DC current gain. High VEBO. 0.6 0.05 1 2 0.4 Specifications ( ) : PNP Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg 1unit Conditions 0.7 0.9 0.2 3 0.95 0.6 1.6 2.8 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 SANYO : CPH6 Ratings (--30)60 (--25)50 (--)15 (--150)100 (--300)200 (--30)20 350 500 150 --55 to +150 0.2 2.9 0.15 Unit V V V mA mA mA mW mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Conditions VCB=(--20)40V, IE=0 VEB=(--)10V, IC=0 VCE=(--)5V, IC=(--)1mA 800 (500) 1500 (800) Ratings min typ max (--)0.1 (--)0.1 3200 (1200) Unit µA µA Marking : 3H Continued on next...