DBA500G

www.DataSheet4U.com Ordering number : ENA0699 DBA500G SANYO Semiconductors DATA SHEET DBA500G Features Diffused Junction Silicon Diode 50A Single-Phase Bridge Rectifier Plastic molded structure. Peak reverse voltage : VRM=600V. Average output current : IO=50A. Specifications Absolute Maximum Ratings at Tc=25°C Parameter Peak Reverse Voltage Average Output Current Surge Forward Current Current Squared Time Junction Temperature Storage Temperature Dilective Strength Voltage Tightening Torque Symbol VRM IO IFSM I2t Tj Tstg Vdis TOR Terminals tc case, AC 1 minute ( ): recommended value 50Hz sine 1cycle peak value, Tc=95°C, with heatsink 50Hz sine wave, non-repetitive, 1cycle peak value, Tj=25°C 1ms≤t<10ms, Tj=25°C, Rating of per diode Conditions Ratings 600 50 500 800 150 --40 to +150 2 0.8(0.6) Unit V A A A2s °C °C kV Nm Electrical Characteristics at Tc=25°C Per Constituent element of bridge. Parameter Forward Voltage Reverse Current Thremal Resistance Marking: BA500G Symbol VF IR Rth(j-c) IF=25A VR=600V With heatsink (Junction-Case) Conditions Ratings min typ max 1.05 10 0.5 Unit V µA °C / W Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medica...