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IGBT Module. CM1000DU-34NF Datasheet

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IGBT Module. CM1000DU-34NF Datasheet






CM1000DU-34NF Module. Datasheet pdf. Equivalent




CM1000DU-34NF Module. Datasheet pdf. Equivalent





Part

CM1000DU-34NF

Description

IGBT Module



Feature


www.DataSheet4U.com MITSUBISHI IGBT MOD ULES CM1000DU-34NF HIGH POWER SWITCHIN G USE CM1000DU-34NF q IC ............ ....................................... ............. 1000A q VCES ............ ....................................... ....... 1700V q Insulated Type q 2-ele ments in a pack APPLICATION General pu rpose inverters Servo controls, etc OU TLINE DRAWING & CI.
Manufacture

Mitsubishi Electric

Datasheet
Download CM1000DU-34NF Datasheet


Mitsubishi Electric CM1000DU-34NF

CM1000DU-34NF; RCUIT DIAGRAM Dimensions in mm A,B HOU SING Type (J. S. T. Mfg. Co. Ltd) A : VHR-2N B : VHR-5N Tc measured point (Th e side of Cu base plate) 150 137.5±0. 25 42 14 14 Tc measured point (The sid e of Cu 12 2 base plate) 21 11 19 38±0 .25 42.5±0.25 38±0.25 74±0.25 74±0. 25 34.6 +1.0 –0.5 4 15.7 A G1 E1 G 2 E2 C1 8-f6.5 MOUNTING HOLES PPS E 2 C1 10.5 B 15.7 5.5 .


Mitsubishi Electric CM1000DU-34NF

18 129.5 166 9-M6 NUTS 12 14 14 14 14 14 14 42 42 25.1 L A B E L C2 C2E1 E2 C1 C1 CIRCUIT DIAGRAM G1 E1 E2 G 2 C2E1 C2 1.9 ±0.2 34.6 +1.0 –0. 5 Sep. 2004 MITSUBISHI IGBT MODULES CM1000DU-34NF HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCE S VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parame ter Collector-emitter volt.


Mitsubishi Electric CM1000DU-34NF

age Gate-emitter voltage Collector curre nt Emitter current Maximum collector di ssipation Junction temperature Storage temperature*3 Isolation voltage Torque strength Weight G-E Short C-E Short TC = 104°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1700 ±20 1000 2000 1000 2000 8900 –40 ~ +150 40 ~ +125 3500 3.5 ~ 4.5 3.5 ~ 4.5 14 00 Unit V V A A W °C °C V N•m .

Part

CM1000DU-34NF

Description

IGBT Module



Feature


www.DataSheet4U.com MITSUBISHI IGBT MOD ULES CM1000DU-34NF HIGH POWER SWITCHIN G USE CM1000DU-34NF q IC ............ ....................................... ............. 1000A q VCES ............ ....................................... ....... 1700V q Insulated Type q 2-ele ments in a pack APPLICATION General pu rpose inverters Servo controls, etc OU TLINE DRAWING & CI.
Manufacture

Mitsubishi Electric

Datasheet
Download CM1000DU-34NF Datasheet




 CM1000DU-34NF
www.DataSheet4U.com
CM1000DU-34NF
MITSUBISHI IGBT MODULES
CM1000DU-34NF
HIGH POWER SWITCHING USE
q IC ................................................................ 1000A
q VCES .......................................................... 1700V
q Insulated Type
q 2-elements in a pack
APPLICATION
General purpose inverters Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
A,B HOUSING Type
(J. S. T. Mfg. Co. Ltd)
A : VHR-2N
B : VHR-5N
Tc measured point
(The side of Cu
base plate)
150
137.5±0.25
42
14 14
Tc measured point
(The side of Cu
12 2 base plate)
34.6
+1.0
–0.5
4
A
B
8-f6.5
MOUNTING HOLES
E2 C1
9-M6 NUTS 12
14 14 14 14 14 14
42 42
1.9 ±0.2
34.6
+1.0
–0.5
LABEL
C2
C2E1
E2
C1
C1
CIRCUIT DIAGRAM
Sep. 2004




 CM1000DU-34NF
MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature*3
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
TC’ = 104°C
Pulse
TC = 25°C
Pulse
TC’ = 25°C
Conditions
Main terminal to base plate, AC 1 min.
Main terminal M6
Mounting holes M6
Typical value
MITSUBISHI IGBT MODULES
CM1000DU-34NF
HIGH POWER SWITCHING USE
(Note 2)
(Note 2)
Ratings
1700
±20
1000
2000
1000
2000
8900
–40 ~ +150
–40 ~ +125
3500
3.5 ~ 4.5
3.5 ~ 4.5
1400
Unit
V
V
A
A
W
°C
°C
V
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Parameter
ICES
Collector cutoff current
Test conditions
VCE = VCES, VGE = 0V
Min.
VGE(th) Gate-emitter threshold voltage IC = 100mA, VCE = 10V
5.5
IGES
Gate leakage current
VGE = VGES, VCE = 0V
VCE(sat)
(chip)
Collector-emitter saturation voltage Tj = 25°C
(without lead resistance)
Tj = 125°C
IC = 1000A, VGE = 15V
(Note 4)
R(lead)
Module lead resistance
Ic = 1000A, terminal-chip
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
QG Total gate charge
VCC = 1000V, IC = 1000A, VGE = 15V
td(on)
Turn-on delay time
tr Turn-on rise time
VCC = 1000V, IC = 1000A
td(off)
Turn-off delay time
VGE1 = VGE2 = 15V
tf Turn-off fall time
RG = 0.47, Inductive load switching operation
trr (Note 1) Reverse recovery time
IE = 1000A
Qrr (Note 1) Reverse recovery charge
VEC(Note 1) Emitter-collector voltage
(chip)
(without lead resistance)
IE = 1000A, VGE = 0V
Rth(j-c’)Q
Rth(j-c’)R
Rth(c-f)
Thermal resistance*1
Contact thermal resistance*2
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound applied (1/2 module)
RG External gate resistance
0.47
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) dose not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause neglible temperature rise.
*1 : Tc measured point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : The operation temperature is restrained by the permission temperature of female connector.
Limits
Typ.
7
2.2
2.45
0.286
6000
90
2.3
0.016
Max.
1
8.5
5
2.8
220
25
4.7
600
150
900
200
450
3
0.014
0.023
4.7
Unit
mA
V
µA
V
m
nF
nC
ns
ns
µC
V
°C/W
Sep. 2004




 CM1000DU-34NF
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
2000
VGE = 20V
(TYPICAL)
Tj = 25°C
15V 13V
1600
12V
1200
800
11V
400 10V
8V 9V
0
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0 500 1000 1500 2000
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
104
7
5
3
2
103
7
5
3
2 Tj = 25°C
Tj = 125°C
102
1234
EMITTER-COLLECTOR VOLTAGE VEC (V)
MITSUBISHI IGBT MODULES
CM1000DU-34NF
HIGH POWER SWITCHING USE
2000
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE = 10V
1600
1200
800
400
Tj = 25°C
Tj = 125°C
0
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
10
Tj = 25°C
(TYPICAL)
8
IC = 400A
IC = 1000A
6
IC = 2000A
4
2
0
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
103
7
5
3
2 Cies
102
7
5
3
2
101
7 Coes
5
3
2
100
7
5
3
2 VGE = 0V
101101 2 3 5 7 100 2 3
Cres
5 7 101 2 3 5 7102
COLLECTOR-EMITTER VOLTAGE VCE (V)
Sep. 2004



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