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CM1200DC-34N Dataheets PDF



Part Number CM1200DC-34N
Manufacturers Mitsubishi Electric
Logo Mitsubishi Electric
Description IGBT Module
Datasheet CM1200DC-34N DatasheetCM1200DC-34N Datasheet (PDF)

www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM1200DC-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200DC-34N q IC .... 1200A q VCES 1700V q Insulated Type q 2-element in a Pack q AISiC Baseplate q Trench Gate IGBT : CSTBT™ q Soft Reverse Recovery Diode APPLICATION Traction drives, High Reliability C.

  CM1200DC-34N   CM1200DC-34N


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www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM1200DC-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200DC-34N q IC ................................................................ 1200A q VCES ....................................................... 1700V q Insulated Type q 2-element in a Pack q AISiC Baseplate q Trench Gate IGBT : CSTBT™ q Soft Reverse Recovery Diode APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM 130±0.5 57±0.25 57±0.25 4 - M8 NUTS Dimensions in mm 4(E1) 2(C2) C2 20±0.1 E1 4 2 G1 124±0.25 140±0.5 G2 C1 3(C1) 1(E2) E2 3 1 30±0.2 E1 G1 C1 C2 G2 E2 CIRCUIT DIAGRAM 6 - M4 NUTS 53±0.2 16±0.2 18±0.2 40±0.2 44±0.2 57±0.2 6 - φ 7 MOUNTING HOLES 55.2±0.3 screwing depth min. 7.7 11.85±0.2 screwing depth min. 16.5 5±0.2 35±0.2 11.5±0.2 14±0.2 38 +1 –0 LABEL HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 29.5±0.5 5±0.2 28 +1 –0 MITSUBISHI HVIGBT MODULES CM1200DC-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 75°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 1700 ±20 1200 2400 1200 2400 6500 –40 ~ +150 –40 ~ +125 –40 ~ +125 4000 10 Unit V V A A A A W °C °C °C V µs (Note 1) (Note 1) RMS, sinusoidal, f = 60Hz, t = 1min. VCC = 1200V, VCES ≤ 1700V, VGE = 15V Tj = 125°C ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg VEC (Note 2) td(on) tr Eon td(off) tf Eoff trr (Note 2) Irr (Note 2) Qrr (Note 2) Erec (Note 2) Note 1. 2. 3. 4. Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Emitter-collector voltage Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery current Reverse recovery charge Reverse recovery energy Conditions VCE = VCES, VGE = 0V, Tj = 25°C IC = 120mA, VCE = 10V, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C IC = 1200A, VGE = 15V, Tj = 25°C IC = 1200A, VGE = 15V, Tj = 125°C VCE = 10V, f = 100kHz VGE = 0V, Tj = 25°C VCC = 850V, IC = 1200A, VGE = 15V, Tj = 25°C IE = 1200A, VGE = 0V, Tj = 25°C (Note 4) IE = 1200A, VGE = 0V, Tj = 125°C (Note 4) VCC = 850V, IC = 1200A, VGE = ±15V RG(on) = 1.3Ω, Tj = 125°C, Ls = 150nH Inductive load VCC = 850V, IC = 1200A, VGE = ±15V RG(off) = 3.3Ω, Tj = 125°C, Ls = 150nH Inductive load VCC = 850V, IC = 1200A, VGE = ±15V RG(on) = 1.3Ω, Tj = 125°C, Ls = 150nH Inductive load (Note 4) (Note 4) Min — 6.0 — — — — — — — — — — — — — — — — — — — Limits Typ — 7.0 — 2.15 2.40 176 9.6 2.8 6.8 2.60 2.30 1.00 0.40 380 1.20 0.30 360 1.00 560 300 220 Max 4 8.0 0.5 2.80 — — — — — 3.30 — — — — — — — — — — — Unit mA V µA V nF nF nF µC V µs µs mJ/pulse µs µs mJ/pulse µs A µC mJ/pulse Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150°C). Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200DC-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part, 1/2 module Junction to Case, FWDi part, 1/2 module Case to Fin, λgrease = 1W/m·K, 1/2 module Min — — — Limits Typ — — 16.0 Max 19.0 42.0 — Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Item Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw Min 7.0 3.0 1.0 — 600 9.5 15.0 — — Limits Typ — — — 0.8 — — — 30 0.28 Max 20.0 6.0 3.0 — — — — — — Unit M — CTI da ds LC-E(int) RC-E(int) Mounting torque Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance Internal lead resistance N·m kg — mm mm nH mΩ IGBT part TC = 25°C HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200DC-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER .


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