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MITSUBISHI HVIGBT MODULES
CM1200DC-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CM1200DC-34N
q IC ................................................................ 1200A q VCES ....................................................... 1700V q Insulated Type q 2-element in a Pack q AISiC Baseplate q Trench Gate IGBT : CSTBT™ q Soft Reverse Recovery Diode
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
130±0.5 57±0.25 57±0.25 4 - M8 NUTS Dimensions in mm
4(E1)
2(C2) C2
20±0.1
E1
4
2
G1
124±0.25
140±0.5
G2 C1 3(C1) 1(E2) E2
3
1
30±0.2
E1 G1 C1 C2 G2
E2
CIRCUIT DIAGRAM
6 - M4 NUTS
53±0.2
16±0.2 18±0.2 40±0.2 44±0.2 57±0.2
6 - φ 7 MOUNTING HOLES
55.2±0.3
screwing depth min. 7.7
11.85±0.2
screwing depth min. 16.5
5±0.2 35±0.2 11.5±0.2 14±0.2
38 +1 –0
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
29.5±0.5
5±0.2
28 +1 –0
MITSUBISHI HVIGBT MODULES
CM1200DC-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
MAXIMUM RATINGS
Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 75°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 1700 ±20 1200 2400 1200 2400 6500 –40 ~ +150 –40 ~ +125 –40 ~ +125 4000 10 Unit V V A A A A W °C °C °C V µs
(Note 1) (Note 1)
RMS, sinusoidal, f = 60Hz, t = 1min. VCC = 1200V, VCES ≤ 1700V, VGE = 15V Tj = 125°C
ELECTRICAL CHARACTERISTICS
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg VEC (Note 2) td(on) tr Eon td(off) tf Eoff trr (Note 2) Irr (Note 2) Qrr (Note 2) Erec (Note 2)
Note 1. 2. 3. 4.
Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Emitter-collector voltage Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery current Reverse recovery charge Reverse recovery energy
Conditions VCE = VCES, VGE = 0V, Tj = 25°C IC = 120mA, VCE = 10V, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C IC = 1200A, VGE = 15V, Tj = 25°C IC = 1200A, VGE = 15V, Tj = 125°C VCE = 10V, f = 100kHz VGE = 0V, Tj = 25°C VCC = 850V, IC = 1200A, VGE = 15V, Tj = 25°C IE = 1200A, VGE = 0V, Tj = 25°C (Note 4) IE = 1200A, VGE = 0V, Tj = 125°C (Note 4) VCC = 850V, IC = 1200A, VGE = ±15V RG(on) = 1.3Ω, Tj = 125°C, Ls = 150nH Inductive load VCC = 850V, IC = 1200A, VGE = ±15V RG(off) = 3.3Ω, Tj = 125°C, Ls = 150nH Inductive load VCC = 850V, IC = 1200A, VGE = ±15V RG(on) = 1.3Ω, Tj = 125°C, Ls = 150nH Inductive load (Note 4) (Note 4)
Min — 6.0 — — — — — — — — — — — — — — — — — — —
Limits Typ — 7.0 — 2.15 2.40 176 9.6 2.8 6.8 2.60 2.30 1.00 0.40 380 1.20 0.30 360 1.00 560 300 220
Max 4 8.0 0.5 2.80 — — — — — 3.30 — — — — — — — — — — —
Unit mA V µA V nF nF nF µC V µs µs mJ/pulse µs µs mJ/pulse µs A µC mJ/pulse
Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150°C). Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200DC-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part, 1/2 module Junction to Case, FWDi part, 1/2 module Case to Fin, λgrease = 1W/m·K, 1/2 module Min — — — Limits Typ — — 16.0 Max 19.0 42.0 — Unit K/kW K/kW K/kW
MECHANICAL CHARACTERISTICS
Symbol Item Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw Min 7.0 3.0 1.0 — 600 9.5 15.0 — — Limits Typ — — — 0.8 — — — 30 0.28 Max 20.0 6.0 3.0 — — — — — — Unit
M — CTI da ds LC-E(int) RC-E(int)
Mounting torque Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance Internal lead resistance
N·m kg — mm mm nH mΩ
IGBT part TC = 25°C
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200DC-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER .