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MITSUBISHI SEMICONDUCTOR
M54513P/FP
8-UNIT 50mA TRANSISTOR ARRAY
DESCRIPTION M54513P and M54513FP are eight-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION
INPUT
IN1→ 1 IN2→ 2 IN3→ 3 IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7 IN8→ 8 GND 9 18 →O1 17 →O2 16 →O3 15 →O4 14 →O5 13 →O6 12 →O7 11 →O8 10 NC NC : No connection
OUTPUT
FEATURES High breakdown voltage (BV CEO ≥ 40V) Synchronizing current (Ic(max) = 50mA) Wide operating temperature range (Ta = –20 to +75°C)
Package type 18P4G(P)
NC
1
20
NC
APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals
FUNCTION The M54513P and M54513FP each have eight circuits consisting of NPN transistors. These ICs have resistance of 2 k Ω at inputs and of 13.6kΩ between the base and emitter. The GND is used in common in each circuit. The transistors allow synchronous flow of 50mA collector current. A maximum of 40V voltage can be applied between the collector and emitter. The M54513FP is enclosed in a molded small flat package, enabling space-saving design.
INPUT
IN1→ 2 IN2→ 3 IN3→ 4 IN4→ 5 IN5→ 6 IN6→ 7 IN7→ 8 IN8→ 9 GND 10
19 →O1 18 →O2 17 →O3 16 →O4 15 →O5 14 →O6 13 →O7 12 →O8 11 NC NC : No connection
OUTPUT
Package type 20P2N-A(FP)
CIRCUIT DIAGRAM
OUTPUT
2K INPUT
13.6K GND The eight circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω
Aug. 1999
MITSUBISHI SEMICONDUCTOR
M54513P/FP
8-UNIT 50mA TRANSISTOR ARRAY
ABSOLUTE MAXIMUM RATINGS
Symbol V CEO IC VI Pd Topr Tstg Parameter Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature
(Unless otherwise noted, Ta = –20 ~ +75°C)
Conditions Output, H Current per circuit output, L Ta = 25°C, when mounted on board
Ratings –0.5 ~ +40 50 –0.5 ~ +10 1.79(P)/1.10(FP) –20 ~ +75 –55 ~ +125
Unit V mA V W °C °C
RECOMMENDED OPERATING CONDITIONS
Symbol VO IC VIH VIL Parameter Output voltage Collector current “H” input voltage “L” input voltage
(Unless otherwise noted, Ta = –20 ~ +75°C)
min 0 0 2 0
Limits typ — — — —
max 40 30 8 0.2
Unit V mA V V
ELECTRICAL CHARACTERISTICS
Symbol V (BR) CEO VCE (sat) II hFE Parameter
(Unless otherwise noted, Ta = –20 ~ +75°C)
Test conditions
Limits min 40 — — — 80 typ+ — 25 70 0.85 200 max — 100 170 1.7 —
Unit V mV mA —
Collector-emitter breakdown voltage ICEO = 100µA Collector-emitter saturation voltage Input current DC amplification factor VI = 2V, IC = 10mA VI = 2.5V, I C = 30mA VI = 2.5V VCE = 4V, IC = 30mA, Ta = 25°C
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25 °C)
Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions min — — Limits typ 65 1200 max — — Unit ns ns
NOTE 1 TEST CIRCUIT
INPUT Measured device VO
TIMING DIAGRAM
50%
RL OUTPUT
50%
INPUT
PG 50Ω CL
OUTPUT 50% 50%
ton
(1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω VP = 2.5VP-P (2) Output conditions : RL = 300Ω, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes
toff
Aug. 1999
MITSUBISHI SEMICONDUCTOR
M54513P/FP
8-UNIT 50mA TRANSISTOR ARRAY
TYPICAL CHARACTERISTICS
Output Saturation Voltage Collector Current Characteristics 50
M54513P VI = 2V Ta = –20°C Ta = 25°C Ta = 75°C
Thermal Derating Factor Characteristics 2.0
Power dissipation Pd (W)
1.5
M54513FP
Collector current Ic (mA)
50 75 100
40
30
1.0
20
0.5
10
0
0
25
0
0
0.05
0.10
0.15
0.20
Ambient temperature Ta (°C) DC Amplification Factor Collector Current Characteristics 103
7 VCE = 4V
Output saturation voltage VCE (sat) (V)
Grounded Emitter Transfer Characteristics 50
VCE = 4V Ta = 75°C Ta = –20°C
DC amplification factor hFE
5 3 2 Ta = 25°C Ta = 75°C
Collector current Ic (mA)
40
30
Ta = 25°C
102
7 5 3 2 Ta = –20°C
20
10
101 0 10
2
3
5 7 101
2
3
5 7 102
0
0
0.5
1.0
1.5
2.0
Collector current Ic (mA)
Input voltage VI (V)
Input Characteristics 5
4
Input current II (mA)
Ta = –20°C
3
Ta = 25°C
2
Ta = 75°C
1
0
0
2
4
6
8
10
Input voltage VI (V)
Aug. 1999
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