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M54513P Dataheets PDF



Part Number M54513P
Manufacturers Mitsubishi Electric
Logo Mitsubishi Electric
Description 8-UNIT 50mA TRANSISTOR ARRAY
Datasheet M54513P DatasheetM54513P Datasheet (PDF)

www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR M54513P/FP 8-UNIT 50mA TRANSISTOR ARRAY DESCRIPTION M54513P and M54513FP are eight-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION         INPUT          IN1→ 1 IN2→ 2 IN3→ 3 IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7 IN8→ 8 GND 9 18 →O1  17 →O2   16 →O3  15 →O4  14 →O5  13.

  M54513P   M54513P


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www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR M54513P/FP 8-UNIT 50mA TRANSISTOR ARRAY DESCRIPTION M54513P and M54513FP are eight-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION         INPUT          IN1→ 1 IN2→ 2 IN3→ 3 IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7 IN8→ 8 GND 9 18 →O1  17 →O2   16 →O3  15 →O4  14 →O5  13 →O6  12 →O7  11 →O8  10 NC NC : No connection     OUTPUT     FEATURES High breakdown voltage (BV CEO ≥ 40V) Synchronizing current (Ic(max) = 50mA) Wide operating temperature range (Ta = –20 to +75°C) Package type 18P4G(P) NC 1 20 NC APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals FUNCTION The M54513P and M54513FP each have eight circuits consisting of NPN transistors. These ICs have resistance of 2 k Ω at inputs and of 13.6kΩ between the base and emitter. The GND is used in common in each circuit. The transistors allow synchronous flow of 50mA collector current. A maximum of 40V voltage can be applied between the collector and emitter. The M54513FP is enclosed in a molded small flat package, enabling space-saving design.         INPUT          IN1→ 2 IN2→ 3 IN3→ 4 IN4→ 5 IN5→ 6 IN6→ 7 IN7→ 8 IN8→ 9 GND 10 19 →O1  18 →O2  17 →O3  16 →O4  15 →O5  14 →O6  13 →O7  12 →O8  11 NC NC : No connection      OUTPUT     Package type 20P2N-A(FP) CIRCUIT DIAGRAM OUTPUT 2K INPUT 13.6K GND The eight circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω Aug. 1999 MITSUBISHI SEMICONDUCTOR M54513P/FP 8-UNIT 50mA TRANSISTOR ARRAY ABSOLUTE MAXIMUM RATINGS Symbol V CEO IC VI Pd Topr Tstg Parameter Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature (Unless otherwise noted, Ta = –20 ~ +75°C) Conditions Output, H Current per circuit output, L Ta = 25°C, when mounted on board Ratings –0.5 ~ +40 50 –0.5 ~ +10 1.79(P)/1.10(FP) –20 ~ +75 –55 ~ +125 Unit V mA V W °C °C RECOMMENDED OPERATING CONDITIONS Symbol VO IC VIH VIL Parameter Output voltage Collector current “H” input voltage “L” input voltage (Unless otherwise noted, Ta = –20 ~ +75°C) min 0 0 2 0 Limits typ — — — — max 40 30 8 0.2 Unit V mA V V ELECTRICAL CHARACTERISTICS Symbol V (BR) CEO VCE (sat) II hFE Parameter (Unless otherwise noted, Ta = –20 ~ +75°C) Test conditions Limits min 40 — — — 80 typ+ — 25 70 0.85 200 max — 100 170 1.7 — Unit V mV mA — Collector-emitter breakdown voltage ICEO = 100µA Collector-emitter saturation voltage Input current DC amplification factor VI = 2V, IC = 10mA VI = 2.5V, I C = 30mA VI = 2.5V VCE = 4V, IC = 30mA, Ta = 25°C + : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25 °C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions min — — Limits typ 65 1200 max — — Unit ns ns NOTE 1 TEST CIRCUIT INPUT Measured device VO TIMING DIAGRAM 50% RL OUTPUT 50% INPUT PG 50Ω CL OUTPUT 50% 50% ton (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω VP = 2.5VP-P (2) Output conditions : RL = 300Ω, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes toff Aug. 1999 MITSUBISHI SEMICONDUCTOR M54513P/FP 8-UNIT 50mA TRANSISTOR ARRAY TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics 50 M54513P VI = 2V Ta = –20°C Ta = 25°C Ta = 75°C Thermal Derating Factor Characteristics 2.0 Power dissipation Pd (W) 1.5 M54513FP Collector current Ic (mA) 50 75 100 40 30 1.0 20 0.5 10 0 0 25 0 0 0.05 0.10 0.15 0.20 Ambient temperature Ta (°C) DC Amplification Factor Collector Current Characteristics 103 7 VCE = 4V Output saturation voltage VCE (sat) (V) Grounded Emitter Transfer Characteristics 50 VCE = 4V Ta = 75°C Ta = –20°C DC amplification factor hFE 5 3 2 Ta = 25°C Ta = 75°C Collector current Ic (mA) 40 30 Ta = 25°C 102 7 5 3 2 Ta = –20°C 20 10 101 0 10 2 3 5 7 101 2 3 5 7 102 0 0 0.5 1.0 1.5 2.0 Collector current Ic (mA) Input voltage VI (V) Input Characteristics 5 4 Input current II (mA) Ta = –20°C 3 Ta = 25°C 2 Ta = 75°C 1 0 0 2 4 6 8 10 Input voltage VI (V) Aug. 1999 .


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