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MITSUBISHI SEMICONDUCTOR
M54580P/FP
7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
DESCRIPTION M54580P and M54580FP are seven-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. PIN CONFIGURATION
INPUT
IN1→ 1 IN2→ 2 IN3→ 3 IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7 GND 8 16 →O1 15 →O2 14 →O3 13 →O4 OUTPUT 12 →O5 11 →O6 10 →O7 9 VS
FEATURES High breakdown voltage (BV CEO ≥ 50V) High-current driving (Io(max) = –150mA) Active L-level input With input diodes Wide operating temperature range (Ta = –20 to +75°C)
16P4(P) Package type 16P2N-A(FP)
CIRCUIT DIAGRAM APPLICATION Drives of relays, printers and indication elements such as LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors
VS 30K 7K INPUT 7K OUTPUT 50K
FUNCTION The M54580P and M54580FP each have seven circuits, which are made of output current-sourcing Darlington transistors consisting of PNP and NPN transistors. Each PNP transistor has a diode and resistance of 7kΩ between the base and input pin. Its emitter and NPN transistor collectors are connected to the VS pin (pin 9). Resistance of 50kΩ is connected between each output pin and GND pin (pin 8). Output current is 150mA maximum. Supply voltage VS is 50V maximum. The M54580FP is enclosed in a molded small flat package, enabling space-saving design.
GND The seven circuits share the VS and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω
ABSOLUTE MAXIMUM RATINGS
Symbol VCEO VS VI IO Pd Topr Tstg Parameter Collector-emitter voltage Supply voltage Input voltage Output current Power dissipation Operating temperature Storage temperature
(Unless otherwise noted, Ta = –20 ~ +75 °C)
Conditions Output, L
Ratings –0.5 ~ +50 50 –0.5 ~ VS
Unit V V V mA W °C °C
Aug. 1999
Current per circuit output, H Ta = 25 °C, when mounted on board
–150 1.47(P)/1.00(FP) –20 ~ +75 –55 ~ +125
MITSUBISHI SEMICONDUCTOR
M54580P/FP
7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
RECOMMENDED OPERATING CONDITIONS
Symbol VS Supply voltage Output current (Current per 1 circuit when 7 circuits are coming on simultaneously) “H” input voltage “L” input voltage Duty Cycle P : no more than 85% FP : no more than 50% Duty Cycle P : no more than 100% FP : no more than 100% Parameter
(Unless otherwise noted, Ta = –20 ~ +75°C)
min 4 0 0 VS–0.4 0
Limits typ — — — — —
max 50 –100
Unit V
IO
mA –50 VS VS–3.2 V V
VIH VIL
ELECTRICAL CHARACTERISTICS
Symbol V (BR) CEO VCE (sat) II IR h FE Parameter
(Unless otherwise noted, Ta = –20 ~ +75°C)
Test conditions ICEO = 100µA
Limits min 50 — — — — — 800 typ+ — 0.9 0.8 –0.3 –0.65 — 3000 max — 1.5 1.2 –0.6 –0.95 100 —
Unit V V mA µA —
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