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M63806P Dataheets PDF



Part Number M63806P
Manufacturers Mitsubishi Electric
Logo Mitsubishi Electric
Description (M63806xx) 8-UNIT 300mA TRANSISTOR ARRAY
Datasheet M63806P DatasheetM63806P Datasheet (PDF)

www.DataSheet4U.com P . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL RY A N I MITSUBISHI SEMICONDUCTOR M63806P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY PIN CONFIGURATION IN1→ IN2→ IN3→ INPUT 1 2 3 18 →O1 17 →O2 16 →O3 15 →O4 14 →O5 13 →O6 12 →O7 11 →O8 10 DESCRIPTION M63806P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits per.

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www.DataSheet4U.com P . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL RY A N I MITSUBISHI SEMICONDUCTOR M63806P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY PIN CONFIGURATION IN1→ IN2→ IN3→ INPUT 1 2 3 18 →O1 17 →O2 16 →O3 15 →O4 14 →O5 13 →O6 12 →O7 11 →O8 10 DESCRIPTION M63806P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. IN4→ 4 IN5→ 5 OUTPUT IN6→ 6 FEATURES q Three package configurations (P, FP, and KP) q Medium breakdown voltage (BVCEO ≥ 35V) q Synchronizing current (IC(max) = 300mA) q Low output saturation voltage q Wide operating temperature range (Ta = –40 to +85 °C) IN7→ IN8→ GND 7 8 9 →NC Package type 18P4G(P) NC 1 20 NC IN1→ 2 19 →O1 18 →O2 17 →O3 16 →O4 15 →O5 14 →O6 13 →O7 12 →O8 11 →NC APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals IN2→ 3 IN3→ 4 IN4→ 5 INPUT IN5→ 6 IN6→ 7 IN7→ 8 IN8→ 9 OUTPUT FUNCTION The M63806P/FP/KP each have eight circuits consisting of NPN transistor. The transistor emitters are all connected to the GND pin. The transistors allow synchronous flow of 300mA collector current. A maximum of 35V voltage can be applied between the collector and emitter. GND 10 NC : No connection 20P2N-A(FP) Package type 20P2E-A(KP) CIRCUIT DIAGRAM OUTPUT INPUT 2.7K 10K GND The eight circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit: Ω Jan. 2000 P . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL RY A N I MITSUBISHI SEMICONDUCTOR M63806P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY (Unless otherwise noted, Ta = –40 ~ +85 °C) ABSOLUTE MAXIMUM RATINGS Symbol V CEO IC VI Pd Topr T stg Parameter Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature Conditions Output, H Current per circuit output, L M63806P M63806FP M63806KP Ratings –0.5 ~ +35 300 –0.5 ~ +35 1.79 1.10 0.68 –40 ~ +85 –55 ~ +125 Unit V mA V W °C °C Ta = 25 °C, when mounted on board RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C) Symbol VO Parameter Output voltage Collector current IC (Current per 1 circuit when 8 circuits are coming on simultaneously) VIN Input voltage M63806P M63806FP M63806KP Duty Cycle no more than 50% Duty Cycle no more than 100% Duty Cycle no more than 30% Duty Cycle no more than 100% Duty Cycle no more than 12% Duty Cycle no more than 100% Test conditions Limits min 0 0 0 0 0 0 0 0 typ — — — — — — — — max 35 250 170 250 130 250 100 20 Unit V mA V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Symbol V (BR) CEO VCE(sat) VIN(on) h FE Parameter Collector-emitter breakdown voltage Test conditions Limits.


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