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www.DataSheet4U.com
P
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IM REL
RY A N I
MITSUBISHI SEMICONDUCTOR <
TRANSISTOR ARRAY>
M63806P/FP/KP
8-UNIT 300mA
TRANSISTOR ARRAY
PIN CONFIGURATION
IN1→ IN2→ IN3→ INPUT
1 2 3 18 →O1 17 →O2 16 →O3 15 →O4 14 →O5 13 →O6 12 →O7 11 →O8 10
DESCRIPTION M63806P/FP/KP are eight-circuit Single
transistor arrays. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
IN4→ 4 IN5→
5
OUTPUT
IN6→ 6
FEATURES q Three package configurations (P, FP, and KP) q Medium breakdown voltage (BVCEO ≥ 35V) q Synchronizing current (IC(max) = 300mA) q Low output saturation voltage q Wide operating temperature range (Ta = –40 to +85 °C)
IN7→ IN8→ GND
7 8 9
→NC
Package type 18P4G(P)
NC
1
20
NC
IN1→ 2
19 →O1 18 →O2 17 →O3 16 →O4 15 →O5 14 →O6 13 →O7 12 →O8 11 →NC
APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals
IN2→ 3 IN3→ 4 IN4→ 5 INPUT IN5→ 6 IN6→ 7 IN7→ 8 IN8→ 9
OUTPUT
FUNCTION The M63806P/FP/KP each have eight circuits consisting of
NPN transistor. The
transistor emitters are all connected to the GND pin. The
transistors allow synchronous flow of 300mA collector current. A maximum of 35V voltage can be applied between the collector and emitter.
GND
10
NC : No connection
20P2N-A(FP)
Package type 20P2E-A(KP)
CIRCUIT DIAGRAM
OUTPUT
IN...
