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M63814GP Dataheets PDF



Part Number M63814GP
Manufacturers Mitsubishi Electric
Logo Mitsubishi Electric
Description (M63814xx) 7-UNIT 300mA TRANSISTOR ARRAY
Datasheet M63814GP DatasheetM63814GP Datasheet (PDF)

www.DataSheet4U.com P . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL RY A N I MITSUBISHI SEMICONDUCTOR M63814P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE PIN CONFIGURATION IN1→ IN2→ → INz3 INPUT IN4→ IN5→ IN6→ IN7→ 1 2 3 4 5 6 7 8 16 →O1 15 →O2 14 →O3 13 →O4 12 →O5 11 →O6 10 →O7 9 DESCRIPTION M63814P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are mad.

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www.DataSheet4U.com P . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL RY A N I MITSUBISHI SEMICONDUCTOR M63814P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE PIN CONFIGURATION IN1→ IN2→ → INz3 INPUT IN4→ IN5→ IN6→ IN7→ 1 2 3 4 5 6 7 8 16 →O1 15 →O2 14 →O3 13 →O4 12 →O5 11 →O6 10 →O7 9 DESCRIPTION M63814P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. OUTPUT FEATURES q Four package configurations (P, FP, GP and KP) q Medium breakdown voltage (BVCEO ≥ 35V) q Synchronizing current (IC(max) = 300mA) q With clamping diodes q Low output saturation voltage q Wide operating temperature range (Ta = –40 to +85 °C) GND →COM COMMOM Package type 16P4(P) 16P2N-A(FP) 16P2S-A(GP) 16P2Z-A(KP) CIRCUIT DIAGRAM COM OUTPUT APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals INPUT 10.5k 10k GND The seven circuits share the COM and GND. FUNCTION The M63814P/FP/GP/KP each have seven circuits consisting of NPN transistor. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin9). The transistor emitters are all connected to the GND pin (pin 8). The transistors allow synchronous flow of 300mA collector current. A maximum of 35V voltage can be applied between the collector and emitter. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit: Ω ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI IF VR Parameter Collector-emitter voltage Collector current (Unless otherwise noted, Ta = –40 ~ +85°C) Conditions Output, H Current per circuit output, L Ratings –0.5 ~ +35 300 –0.5 ~ +35 300 M63814P M63814FP M63814GP M63814KP 35 1.47 1.00 0.80 0.78 –40 ~ +85 –55 ~ +125 Unit V mA V mA V Input voltage Clamping diode forward current Clamping diode reverse voltage Ta = 25°C, when mounted on board Pd Power dissipation W Topr Tstg Operating temperature Storage temperature °C °C Jan. 2000 P . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL RY A N I MITSUBISHI SEMICONDUCTOR M63814P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C) Symbol VO Parameter Output voltage M63814P Collector current (Current per 1 cirIC cuit when 7 circuits are coming on simultaneously) M63814GP M63814KP VIN Input voltage M63814FP Duty Cycle no more than 45% Duty Cycle no more than 100% Duty Cycle no more than 30% Duty Cycle no more than 100% Duty Cycle no more than 24% Duty Cycle no more than 100% Duty Cycle no more than 24% Duty Cycle no more than 100% Test conditions Limits min 0 0 0 0 0 0 0 0 0 0 typ — — — — — — — — — — max 35 250 160 250 130 250 120 250 120 30 Unit V mA V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Symbol V (BR) CEO VCE(sat) VIN(on) VF IR h FE Parameter Collector-emitter breakdown voltage Test conditions Limits min 35 — — 7.5 — — 50 typ — — — 11.0 1.2 — — max — 0.2 0.8 15.0 2.0 10 — Unit V V V V µA — ICEO = 10µA IIN = 1mA, IC = 10mA Collector-emitter saturation voltage IIN = 2mA, IC = 150mA “On” input voltage IIN = 1mA, IC = 10mA Clamping diode forward volltage Clamping diode reverse current DC amplification factor IF = 250mA VR = 35V VCE = 10V, IC = 10mA SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions Limits min — — typ 120 240 max — — Unit ns ns NOTE 1 TEST CIRCUIT INPUT Vo TIMING DIAGRAM 50% Measured device OPEN PG 50Ω CL OUTPUT RL 50% INPUT OUTPUT 50% 50% ton (1)Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, VIH = 11V (2)Input-output conditions : RL = 220Ω, Vo = 35V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes toff Jan. 2000 P . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL RY A N I MITSUBISHI SEMICONDUCTOR M63814P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics 2.0 Power dissipation Pd (W) Input Characteristics 4 Ta = –40°C Input current II (mA) 1.5 M63814P 3 Ta = 25°C 1.0 M63814FP M63814GP M63814KP 0.744 0.520 0.418 0.406 2 Ta = 85°C 0.5 1 0 0 25 50 75 85 100 0 0 5 10 15 20 25 30 Ambient temperature Ta (°C) Duty Cycle-Collector Characteristics (M63814P) 400 400 Input voltage VI (V) Duty Cycle-Collector Characteristics (M63814P) Collector current Ic (mA) Collector current Ic (mA) 300 1~4 5 6 7 300 1~2 3 4 200 200 5 6 7 •The collector current values represent the .


M63814FP M63814GP M63814KP


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