M63817KP

www.DataSheet4U.com P . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL RY A N I MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE PIN CONFIGURATION IN1→ IN2→ IN3→ INPUT 1 2 3 18 →O1 17 →O2 16 →O3 15 →O4 14 →O5 13 →O6 12 →O7 11 →O8 10 DESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. IN4→ 4 IN5→ 5 OUTPUT IN6→ 6 FEATURES Three package configurations (P, FP, and KP) q Medium breakdown voltage (BVCEO ≥ 35V) q Synchronizing current (IC(max) = 300mA) q With clamping diodes q Low output saturation voltage q Wide operating temperature range (Ta = –40 to +85 °C) q IN7→ IN8→ GND 7 8 9 →COM COMMOM Package type 18P4G(P) NC 1 20 NC IN1→ 2 IN2→ 3 19 →O1 18 →O2 17 →O3 16 →O4 15 →O5 14 →O6 13 →O7 12 →O8 11 →COM APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals IN3→ 4 IN4→ 5 INPUT IN5→ 6 IN6→ 7 IN7→ 8 IN8→ 9 OUTPUT FUNCTION The M63817P/FP/KP each have eight circuits consisting of NPN transistor. A spike-killer clamping diode is provided between each output pin (collector) and COM pin. The transistor emitters are all connected to the GND pin. The transistors allow synchronous flow of 300mA collector current. A maximu...