M63828DP

www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. PIN CONFIGURATION        INPUT         IN1→ 1 IN2→ 2 IN3→ 3 IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7 GND 8 16 →O1  15 →O2   14 →O3  13 →O4  OUTPUT 12 →O5  11 →O6  10 →O7  9 COM COMMON        FEATURES Two package configurations (WP/DP) High breakdown voltage (BVCEO ≥ 50V) High-current driving (Ic(max) = 500mA) With clamping diodes Driving available with TTL, PMOS IC output Wide operating temperature range (Ta = –40 to +85° C) 16P4X-A(WP) Package type 16P2X-B(DP) CIRCUIT DIAGRAM COM OUTPUT APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces INPUT 10.5K 7.2K 3K GND The seven circuits share the COM and GND. FUNCTION The M63828WP and M63828DP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 10.5k Ω between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8). The col...