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M63820FP Dataheets PDF



Part Number M63820FP
Manufacturers Mitsubishi Electric
Logo Mitsubishi Electric
Description (M63820xP) 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY
Datasheet M63820FP DatasheetM63820FP Datasheet (PDF)

www.DataSheet4U.com on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som MITSUBISHI SEMICONDUCTOR P MIN RELI ARY M63820FP/KP 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE PIN CONFIGURATION NC IN1 IN2 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 DESCRIPTION The M63820FP/KP 8-channel sinkdriver, consists of 16 NPN transistors connected to from eight high current gain driver pairs. NC O1 O2 O3 O4 OUTPUT O5 .

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www.DataSheet4U.com on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som MITSUBISHI SEMICONDUCTOR P MIN RELI ARY M63820FP/KP 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE PIN CONFIGURATION NC IN1 IN2 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 DESCRIPTION The M63820FP/KP 8-channel sinkdriver, consists of 16 NPN transistors connected to from eight high current gain driver pairs. NC O1 O2 O3 O4 OUTPUT O5 O6 O7 O8 COM COMMON FEATURES G High breakdown voltage (BV CEO ≥ 50V) G High-current driving (IC(max) = 500mA) G With clamping diodes G 3V micro computer series compatible input G Wide operating temperature range (Ta = –40 to +85° C) IN3 IN4 INPUT IN5 IN6 IN7 IN8 GND APPLICATION Output for 3 voltage microcomputer series and interface with high voltage system. Relay and small printer driver, LED, or incandescent display digit driver. 20P2N-A(FP) Package type 20P2E-A(KP) NC : No connection CIRCUIT DIAGRAM FUNCTION The M63820FP/KP is transistor-array of high active level eight units type which can do direct drive of 3 voltage microcomputer series. A resistor of 1.05kΩ is connected between the input pin. A clamp diode for inductive load transient suppression is connected for the output pin (collector) and COM pin (pin11). All emitters of the output transistor are connected to GND (pin10). The outputs are capable of driving 500mA and are rated for operation with output voltage up to 50V. COM OUTPUT 1.05K INPUT 7.2K 3K GND The eight circuits share the COM and GND The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current (Unless otherwise noted, Ta = –40 ~ +85°C) Conditions Output, H Current per circuit output, L Ratings –0.5 ~ +50 500 –0.5 ~ +10 500 50 1.10(GP)/0.68(KP) –40 ~ +85 –55 ~ +125 Unit V mA V mA V W °C °C Sep. 2001 Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25°C, when mounted on board MITSUBISHI SEMICONDUCTOR on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P MIN RELI ARY M63820FP/KP 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE (Unless otherwise noted, Ta = –40 ~ +85°C) RECOMMENDED OPERATING CONDITIONS Symbol VO Output voltage Parameter Limits min 0 0 typ — — max 50 400 Unit V IC Collector current (Current per 1 circuit when 8 circuits are coming on simultaneously) Duty Cycle FP : no more than 4% KP : no more than 2% Duty Cycle FP : no more than 15% KP : no more than 6% IC ≤ 400mA mA 0 2.7 0 — — — 200 10 0.6 V V VIH VIL “H” input voltage “L” input voltage ELECTRICAL CHARACTERISTICS Symbol V (BR) CEO VCE(sat) II VF IR hFE Parameter (Unless otherwise noted, Ta = 25°C) Test conditions Limits min 50 — — — — — — 1000 typ — 1.2 1.0 0.9 1.5 1.4 — 2500 max — 1.6 1.3 1.1 2.4 2.0 100 — Unit V V mA V µA — Collector-emitter breakdown voltage ICEO = 100µA II = 500µA, IC = 350mA Collector-emitter saturation voltage II = 350µA, IC = 200mA II = 250µA, IC = 100mA Input current VI = 3V Clamping diode forward volltage IF = 350mA Clamping diode reverse current VR = 50V DC amplification factor VCE = 2V, IC = 350mA SWITCHING CHARACTERISTICS Symbol ton toff Parameter Turn-on time Turn-off time (Unless otherwise noted, Ta = 25°C) Test conditions CL = 15pF (note 1) Limits min — — typ 15 350 max — — Unit ns ns NOTE 1 TEST CIRCUIT INPUT VO TIMING DIAGRAM 50% 50% Measured device OPEN PG 50Ω RL OUTPUT INPUT OUTPUT CL 50% 50% ton (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω VI = 0 ~ 3V (2)Input-output conditions : RL = 25Ω, Vo = 10V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes toff Sep. 2001 .


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