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M63832KP Dataheets PDF



Part Number M63832KP
Manufacturers Mitsubishi Electric
Logo Mitsubishi Electric
Description (M63832xP) 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY
Datasheet M63832KP DatasheetM63832KP Datasheet (PDF)

www.DataSheet4U.com on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som MITSUBISHI SEMICONDUCTOR P MIN RELI ARY M63832GP/KP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY PIN CONFIGURATION DESCRIPTION The M63832GP/KP 7-channel sinkdriver, consists of 7 PNP and 14 NPN transistors connected to from seven high current gain driver pairs. IN1 IN2 IN3 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 O1 O2 O3 O4 O5 O6 O7 VCC OUTPUT FEATURE.

  M63832KP   M63832KP


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www.DataSheet4U.com on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som MITSUBISHI SEMICONDUCTOR P MIN RELI ARY M63832GP/KP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY PIN CONFIGURATION DESCRIPTION The M63832GP/KP 7-channel sinkdriver, consists of 7 PNP and 14 NPN transistors connected to from seven high current gain driver pairs. IN1 IN2 IN3 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 O1 O2 O3 O4 O5 O6 O7 VCC OUTPUT FEATURES G High breakdown voltage (BV CEO ≥ 50V) G High-current driving (IC(max) = 500mA) G 3V micro computer compatible input G “L” active level input G With input diode G Wide operating temperature range (Ta = –40 to +85° C) INPUT IN4 IN5 IN6 IN7 GND 16P2S-A(GP) Package type 16P2Z-A(KP) APPLICATION Output for 3 voltage microcomputer series and interface with high voltage system. Relay and small printer driver, LED, or incandescent display digit driver. CIRCUIT DIAGRAM VCC FUNCTION The M63832GP/KP is transistor-array of high active level seven units type which can do direct drive of 3 voltage microcomputer series. A resistor of 3.5kΩ is connected between the input and the base of PNP transistors. The input diode is intended to prevent the flow of current from the input to the Vcc. Without this diode, the current flows from “H” input to the Vcc and the “L” input circuit is activated, in such a case where one of the inputs of the 7 circuit is “H” and the other are “L” to save power consumption. The diode is inserted to prevent such mis-operation. The outputs are capable of driving 500mA and are rated for operation with output voltage up to 50V. 20K INPUT 3.5K 1.05K 7.2K 3K GND OUTPUT The seven circuits share the Vcc and GND The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω ABSOLUTE MAXIMUM RATINGS Symbol VCC VCEO IC VI Pd Topr Tstg Parameter Supply voltage Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature (Unless otherwise noted, Ta = –40 ~ +85°C) Conditions Output, H Current per circuit output, L Ta = 25°C, when mounted on board Ratings 7 –0.5 ~ +50 500 –0.5 ~ VCC 0.80(FP)/0.78(KP) –40 ~ +85 –55 ~ +125 Unit V V mA V W °C °C Sep. 2001 MITSUBISHI SEMICONDUCTOR on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P MIN RELI ARY M63832GP/KP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY (Unless otherwise noted, Ta = –40 ~ +85°C) RECOMMENDED OPERATING CONDITIONS Symbol VCC Supply voltage Parameter Limits min 2.7 0 typ 3.0 — max 3.6 400 Unit V IC Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) Duty Cycle GP/KP : no more than 2% Duty Cycle GP/KP : no more than 10% mA 0 VCC-0.5 0 — — — 200 VCC VCC-2.2 V V VIH VIL “H” input voltage “L” input voltage ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –40 ~ +85°C) Symbol V (BR) CEO VCE(sat) II ICC hFE Parameter Test conditions Limits min 50 — — — — 2000 typ ✽ — 1.15 0.93 –220 2.6 10000 max — 2.4 1.6 –600 4.0 — Unit V V µA mA — Collector-emitter breakdown voltage ICEO = 100µA VCC = 2.7V, VI = 0.5V, IC = 400mA Collector-emitter saturation voltage VCC = 2.7V, VI = 0.5V, IC = 200mA Input current VI = VCC-2.2V Supply current (AN only Input) VCC = 3.6V, VI = 0.5V DC amplification factor VCC = 2.7V, VCE = 2V, IC = 0.35A, Ta = 25°C ✽ : Typical values are at Ta = 25°C SWITCHING CHARACTERISTICS Symbol ton toff Parameter Turn-on time Turn-off time (Unless otherwise noted, Ta = 25°C) Test conditions CL = 15pF (note 1) Limits min — — typ 120 4500 max — — Unit ns ns NOTE 1 TEST CIRCUIT INPUT VCC Measured device PG 50Ω VO TIMING DIAGRAM INPUT 50% 50% RL OUTPUT OUTPUT 50% 50% CL ton (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω VI = 0.5 ~ 2.7V (2)Input-output conditions : RL = 30Ω, Vo = 10V, Vcc = 2.7V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes toff Sep. 2001 MITSUBISHI SEMICONDUCTOR on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P MIN RELI ARY M63832GP/KP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics 500 M63832GP M63832KP Vcc=2.7V VI=0.5V Thermal Derating Factor Characteristics 1.0 Power dissipation Pd(max) (W) 0.78 Collector current Ic (mA) 0.8 400 0.6 0.416 0.406 300 0.4 200 Ta= 25°C Ta=85°C Ta= –20°C 0.2 100 0 0 25 50 75 85 100 0 0 0.5 1.0 1.5 2.0 Ambient temperature Ta (°C) Output saturation voltage VCE(sat) (V) Duty Cycle-Collector Characteristics (M63832GP/KP) 500 500 Duty Cycle-Collector Characteristics (M63832GP/KP) •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of .


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