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M81705FP Dataheets PDF



Part Number M81705FP
Manufacturers Mitsubishi Electric
Logo Mitsubishi Electric
Description HIGH VOLTAGE HIGH SIDE DRIVER
Datasheet M81705FP DatasheetM81705FP Datasheet (PDF)

www.DataSheet4U.com MITSUBISHI SEMICONDUCTORS M81705FP HIGH VOLTAGE HIGH SIDE DRIVER DESCRIPTION M81705FP is high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION (TOP VIEW) FEATURES ¡FLOATING SUPPLY VOLTAGE 600V ¡OUTPUT CURRENT +150mA –125mA ¡HIGH SIDE DRIVER ¡SOP-8 APPLICATIONS PDP, MOSFET and IGBT module inverter driver for ACservomotor and general purpose. NC.

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www.DataSheet4U.com MITSUBISHI SEMICONDUCTORS M81705FP HIGH VOLTAGE HIGH SIDE DRIVER DESCRIPTION M81705FP is high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION (TOP VIEW) FEATURES ¡FLOATING SUPPLY VOLTAGE ................................... 600V ¡OUTPUT CURRENT ............................................. +150mA –125mA ¡HIGH SIDE DRIVER ¡SOP-8 APPLICATIONS PDP, MOSFET and IGBT module inverter driver for ACservomotor and general purpose. NC 1 VCC 2 IN 3 GND 4 8 NC 7 VB 6 OUT 5 VS NC:NO INTERNAL CONNECTION Outline 8P2S BLOCK DIAGRAM VCC 2 4 GND VREG 7 VB HV LEVEL SHIFT UV DETECT FILTER R Q 6 OUT IN 3 PULSE GEN R INTER LOCK S 5 VS Mar. 2003 MITSUBISHI SEMICONDUCTORS M81705FP HIGH VOLTAGE HIGH SIDE DRIVER ABSOLUTE MAXIMUM RATINGS Symbol VB VS VBS VOUT VCC VIN dVS/dt PD Kq Rth(j-c) Tj Topr Tstg Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Logic Input Voltage Allowable Offset Supply Voltage Transient Package Power Dissipation Linear Derating Factor Junction-Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature Conditions Ratings –0.5 ~ 624 VB–24 ~ VB+0.5 VBS = VB-VS –0.5 ~ 24 VS–0.5 ~ VB+0.5 –0.5 ~ 24 –0.5 ~ 5.5 ±50 0.60 –6.0 50 –20 ~ 125 –20 ~ 100 –40 ~ 125 Unit V V V V V V V/ns W mW/°C °C/W °C °C °C Ta = 25°C, On Board Ta > 25°C, On Board RECOMMENDED OPERATING CONDITIONS Symbol VB VS VBS VCC VIN Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage Low Side Fixed Supply Voltage Logic Input Voltage Test conditions Min. VS+13.5 –5 13.5 13.5 0 Limits Typ. — — — — — Max. VS+20 500 20 20 5 Unit V V V V V VB > 13.5V VBS = VB-VS THERMAL DERATING FACTOR CHARACTERISTIC 0.8 Package Power Dissipation PD [W] 0.6 0.4 0.2 0.0 0 25 50 75 100 125 Temperature [°C] Mar. 2003 MITSUBISHI SEMICONDUCTORS M81705FP HIGH VOLTAGE HIGH SIDE DRIVER ELECTRICAL CHARACTERISTICS (Ta=25°C, VCC=VBS (=VB–VS)=15V, unless otherwise specified) Symbol IFS IBS ICC VOH VOL VIH VIL IIH IIL VBSuvr VBSuvh tVBSuv IOH IOL1 IOL2 ROH ROL1 ROL2 tdLH tdHL tr tf VOth Parameter Floating Supply Leakage Current VBS Standby Current VCC Standby Current High Level Output Voltage Low Level Output Voltage High Level Input Threshold Voltage Low Level Input Threshold Voltage High Level Input Bias Current Low Level Input Bias Current VBS Supply UV Reset Voltage VBS Supply UV Hysteresis Voltage VBS Supply UV Filter Time Output High Level Short Circuit Pulsed Current Output Low Level Short Circuit Pulsed Current Output Low Level Short Circuit Pulsed Current Output High Level On Resistance Output Low Level On Resistance1 Output Low Level On Resistance2 High Side Turn-On Propagation Delay High Side Turn-Off Propagation Delay High Side Turn-On Rise Time High Side Turn-Off Fall Time ROL1/ROL2 Switching Output Voltage VO=0V, VIN=0V, PW<10µs VO=1V, VIN=5V, PW<10µs VO=15V, VIN=5V, PW<10µs IO=–100mA, ROH=(VOH-VO)/IO VO=1V, ROL1=VO/IO VO=5V, ROL2=VO/IO CL=1000pF between OUT – VS CL=1000pF between OUT – VS CL=1000pF between OUT – VS CL=1000pF between OUT – VS VIN=5V VIN=0V IO=0A IO=0A Test conditions VB=VS=600V Min. — 0.25 0.50 14.9 — 2.5 0.8 –50 –200 10.5 0.2 — — — — — — — 100 100 — — 1.5 Limits Typ.* — 0.50 0.75 — — 3.0 1.5 –20 –100 11.5 0.5 5 –125 40 150 120 50 100 — — 220 110 2.5 Max. 1.0 0.75 1.00 — 0.1 4.0 2.0 — — 12.5 0.8 — — — — 160 60 130 500 500 — — 4.0 Unit µA mA mA V V V V µA µA V V µs mA mA mA Ω Ω Ω ns ns ns ns V * Typ. is not specified. Mar. 2003 MITSUBISHI SEMICONDUCTORS M81705FP HIGH VOLTAGE HIGH SIDE DRIVER TIMING DIAGRAM 1.Input/Output Timing Diagram When input signal is “L”, then output signal “H”. 2.VBS Supply Under Voltage Lockout Timing Diagram When VBS Supply Voltage keeps lower UV Trip Voltage (VBSuvt = VBSuvr – VBSuvh) for VBS Supply UV Filter Time, output signal becomes “L”. And then, VBS Supply Voltage is higher UV Reset Voltage, output signal keeps “L” until next input signal is “L”. VBS VBSuvt tVBSuv OUT VBSuvh VBSuvr IN 3.Allowable supply voltage transient Firstly, supply VCC with voltage. Secondly, supply VBS with voltage. In the case of shutting off supply voltage, shut off VBS Supply Voltage firstly. Secondly, shut off VCC Supply Voltage. In case VBS or VCC is started too fast, output signal may be “H”. 4.ROL1/ROL2 Switching Output Voltage VOth OUT VOth IN As shown by the solid line of the timing chart, the output on-resistance drops at ‘VOth’ level when the output is in the ‘L’ state (output level falls). Below the ‘VOth’ level, the output level falls more steeply. Mar. 2003 MITSUBISHI SEMICONDUCTORS M81705FP HIGH VOLTAGE HIGH SIDE DRIVER PERFORMANCE CURVES ICC vs. Voltage 1.0 1.0 IBS vs. Voltage 0.8 0.8 ICC (mA) IBS (mA) 15 18 VCC (V) 21 24 0.6 0.6 0.4 0.4 0.2 .


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