(PDF) IAM-93516 Datasheet PDF | Agilent





IAM-93516 Datasheet PDF

Part Number IAM-93516
Description High Linearity Integrated GaAs Mixer
Manufacture Agilent
Total Page 10 Pages
PDF Download Download IAM-93516 Datasheet PDF

Features: Datasheet pdf www.DataSheet4U.com Agilent IAM-93516 H igh Linearity Integrated GaAs Mixer Dat a Sheet Description Agilent Technologi es’s IAM93516 is a high linearity GaA s FET Mixer using 0.5um enhancement mod e pHEMT technology. This device houses in a 3x3 LPCC package. The IAM-93516 ha s a built-in LO buffer amplifier and an IF amplification stage that serve as a n ideal solution for reducing board spa ce and delivering excellent high IIP3, gain and isolation with a low LO drive power. The device is designed with a di fferential configuration to provide goo d noise immunity. The LO port is 50 ohm matched and can be driven differential or single ended. An interstage match i s introduced between the mixer and ampl ifier stage to allow device tuning at t he desired RF and LO frequency. The int erstage match can be a simple low pass, high pass or intermediate frequency tr ap. The amplifier output port is 200 o hm matched and fully differential. The simple matching at the RF port provides for optimum input return .

Keywords: IAM-93516, datasheet, pdf, Agilent, High, Linearity, Integrated, GaAs, Mixer, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

IAM-93516 datasheet
www.DataSheet4U.com
Agilent IAM-93516 High Linearity
Integrated GaAs Mixer
Data Sheet
Description
Agilent Technologies’s IAM-
93516 is a high linearity GaAs
FET Mixer using 0.5um
enhancement mode pHEMT
technology. This device houses
in a 3x3 LPCC package. The
IAM-93516 has a built-in LO
buffer amplifier and an IF
amplification stage that serve
as an ideal solution for
reducing board space and
delivering excellent high IIP3,
gain and isolation with a low
LO drive power. The device is
designed with a differential
configuration to provide good
noise immunity. The LO port
is 50 ohm matched and can be
driven differential or single
ended. An interstage match is
introduced between the mixer
and amplifier stage to allow
device tuning at the desired
RF and LO frequency. The
interstage match can be a
simple low pass, high pass or
intermediate frequency trap.
The amplifier output port is
200 ohm matched and fully
differential. The simple
matching at the RF port
provides for optimum input
return loss, noise figure and
IIP3 performance.
The IAM-93516 is ideally
suited for frequency down
conversion for base station
radio card receiver, microwave
link receiver, MMDS,
modulation and demodulation
for receiver and general
purpose resistive FET mixer,
which require high linearity.
All devices are 100% RF and
DC tested.
Applications
Frequency down converter for
base station radio card,
microwave link transceiver, and
MMDS
Modulation and demodulation for
receiver
General purpose resistive FET
mixer for other high linearity
applications
Features
DC =5V @ 111mA (Typ.)
RF =1.91 GHz, PinRF = -10 dBm;
LO =1.7 GHz, PinLO = 0 dBm;
IF = 210 MHz unless otherwise
specified
High Linearity: 23.1 dBm IIP3(typ)
Conversion Gain: 9.4 dB typical
Low Noise Figure: 11.6 dB
Wide band operation:
400-3000 MHz RF & LO input
70 – 300 MHz IF output
Fully differential or single ended
operation
High P1dB: 19.3 dB typical
Consistent RF performance over
LO Power
Low current consumption: 5V@
111mA typical
Excellent uniformity in product
specifications
3mm x 3mm x 0.9mm LPCC
package
MTTF > 300 years[1]
MSL-1 and Lead-free.

IAM-93516 datasheet
Pin Connections and Package Marking
Top View
Note:
Package marking provides orientation and identification
“M2” = Device Code
“X” = Month code indicates the month of manufacture
+VDD 5
Interstage Match
MIX_OUT+ 3 2 RF+ 1 IFA_IN+
6
LO+
LO Buffer
72
LO --
Mixer
3pF
280 ohm
3pF
Amplifier
+VDD
14
IF+
16
13
IF -
MIX_OUT - 10 11 RF - 12 IFA_IN -
Interstage Match
1.0 Absolute Maximum Ratings [1]
Symbol
VD
PinRF
PinLO
TCH
TSTG
θch_b
Parameter
Supply Voltage [2]
CW RF Input Power [2]
CW LO Input Power [2]
Channel Temperature
Storage Temperature
Thermal Resistance [4]
Units
V
dBm
dBm
°C
°C
°C/W
Absolute maximum
7
30
18
150
-65 to 150
39
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Determined at DC quiescent conditions and TA = 25°C.
3. Board (package belly) temperature TB is 25°C. Derate 25 mW/°C for TB > 130 °C.
4. Channel-to-board thermal resistance measured using Infra Red Imaging Method and 150o C Liquid Crystal Measurement method.
2.0 Product Consistency Distribution Charts [5,6]
400
Stdev=0.74
300
-3 Std
200
+3 Std
100
0
107 108 109 110 111 112 113 114
Id
Figure 1. ID (mA) [7] Nominal = 111.2mA
180
150 Stdev = 0.14
120
-3 Std
90
+ 3 Std
60
30
0
8.8 9.0 9.2 9.4 9.6 9.8
180
150 Stdev = 0.5
120
90 -3 Std
60
30
0
21 22
23
+3 Std
24 25
Figure 2. GAIN (dB) [8] Nominal = 9.4dB
Figure 3. IIP3 (dBm) [8] Nominal = 23.1dBm
2





Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)