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MG300Q2YS65H
IGBT Module Silicon N Channel IGBT
Description
www.DataSheet4U.com MG300Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS65H High Power & High Speed Switching Applications · · · High input impedance Enhancement-mode The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA ― ― 2-109C4A Maximum Ratings (Ta = 25°C) Characteristics Co...
Toshiba Semiconductor
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