IGBT Module Silicon N Channel IGBT
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MG400Q2YS60A
TOSHIBA IGBT Module Silicon N Channel IGBT
MG400Q2YS60A
High Power Switching Applicat...
Description
www.DataSheet4U.com
MG400Q2YS60A
TOSHIBA IGBT Module Silicon N Channel IGBT
MG400Q2YS60A
High Power Switching Applications Motor Control Applications
· · · · Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) The electrodes are isolated from case. Low thermal resistance. VCE (sat) = 2.4 V (typ.)
Equivalent Circuit
C1
5 6 7 FO E1/C2
4 1 2 3
OT
FO
E2 Signal terminal 1. 5. G (L) G (H) 2. 6. FO (L) FO (H) 3. 7. E (L) E (H) 4. 8. VD Open
1
2002-09-06
MG400Q2YS60A
Package Dimensions: 2-123C1B
1. 5.
G (L) G (H)
2. 6.
FO (L) FO (H)
3. 7.
E (L) E (H)
4. 8.
VD Open
Signal Terminal Layout
1. 7 5 8 2.54 25.4 ± 0.6 6 2. 3. 4. 5. 6. 7. 2.54 8.
G (L) FO (L) E (L) VD G (H) FO (H) E (H) Open
3 1
4 2
2.54
Weight: 375 g
2
2002-09-06
MG400Q2YS60A
Maximum Ratings (Ta = 25°C)
Stage Characteristics Collector-emitter voltage Gate-emitter voltage DC Collector current Inverter Forward current 1 ms Collector power dissipation (Tc = 25°C) Control voltage (OT) Control Fault input voltage Fault input current Junction temperature Storage temperature range Module Operation temperature range Isolation voltage Screw torque 1 ms DC Symbol VCES VGES IC ICP IF IFM PC VD VFO IFO Tj Tstg Tope Visol ¾ Rating 1200 ±20 400 A 800 400 A 800 3750 20 20 20 150 -40~125 -20~100 2500 (AC 1 min) 3 (M5) W V V mA °C °C °C V N・m Unit V V
Electrical Characteristics (Tj = 25°C)
1. Inverter stage
Characteristics Gate lea...
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