MG600Q1US61

www.DataSheet4U.com MG600Q1US61 TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US61 High Power Switching Applications Motor Control Applications · · · · · High input impedance High speed: tf = 0.3 µs (max) Inductive load Low saturation voltage: VCE (sat) = 2.6 V (max) The electrodes are isolated from case. Enhancement-mode Unit: mm Equivalent Circuit C G E E JEDEC JEITA TOSHIBA Weight: 465 g (typ.) ― ― 2-109F1A Maximum Ratings (Tc = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Forward current DC (Tc = 80°C) DC (Tc = 80°C) Symbol VCES VGES IC IF PC Tj Tstg Visol Terminal Mounting ¾ ¾ Rating 1200 ±20 600 600 5400 150 -40 to 125 2500 (AC 1 minute) 3 3 Unit V V A A W °C °C Vrms N·m N·m Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque 1 2002-10-04 MG600Q1US61 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) tr ton td (off) tf toff VF trr Rth (j-c) IF = 600 A, VGE = 0 V Tc = 25°C Tc = 125°C Inductive load VCC = 600 V IC = 600 A VGE = ±15 V RG = 2.0 W Test Condition VGE = ±20 V, VCE = 0 V VCE = 1200 V, VGE = 0 V IC = 600 ...