type. 2SB1054 Datasheet

2SB1054 Datasheet PDF


Part

2SB1054

Description

Silicon PNP triple diffusion planar type

Manufacture

Panasonic Semiconductor

Page 3 Pages
Datasheet
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2SB1054 Datasheet
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2SB1054
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD1485
Features
Excellent collector current IC characteristics of forward current
transfer ratio hFE
Wide safe operation area
High transition frequency fT
Full-pack package which can be installed to the heat sink with one
screw
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
100
100
5
5
8
60
3
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
15.0±0.3
11.0±0.2
Unit: mm
5.0±0.2
(3.2)
φ 3.2±0.1
2.0±0.2
1.1±0.1
2.0±0.1
0.6±0.2
5.45±0.3
10.9±0.5
123
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VBE
ICBO
IEBO
hFE1
hFE2 *
hFE3
VCE(sat)
fT
Cob
VCE = −5 V, IC = −3 A
VCB = −100 V, IE = 0
VEB = −3 V, IC = 0
VCE = −5 V, IC = −20 mA
VCE = −5 V, IC = −1 A
VCE = −5 V, IC = −3 A
IC = −3 A, IB = − 0.3 A
VCE = −5 V, IC = − 0.5 A, f = 1 MHz
VCB = −10 V, IE = 0, f = 1 MHz
1.8 V
50 µA
50 µA
20
40 200
20
2.0 V
20 MHz
170 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2
40 to 80
60 to 120
100 to 200
Publication date: March 2003
SJD00038BED
1

2SB1054 Datasheet
2SB1054
80
(1)
60
PC Ta
(1)TC=Ta
(2)With a 100×100×2mm
Al heat sink
(3)Without heat sink
(PC=3.0W)
40
20
(2)
(3)
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
6
TC=25˚C
IB=–80mA
5
–70mA
–60mA
4 –50mA
–40mA
3 –30mA
–20mA
2
–10mA
1
–5mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
IC VBE
6
VCE=–5V
25˚C
5
TC=100˚C –25˚C
4
3
2
1
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
100
10
1
0.1
VCE(sat) IC
IC/IB=10
TC=100˚C
25˚C
–25˚C
hFE IC
104
VCE=–5V
1 000
103
TC=100˚C
25˚C
102
–25˚C
10
100
10
1
fT IC
VCE=–5V
f=1MHz
TC=25˚C
0.01
0.01
0.1
1
Collector current IC (A)
10
1
0.01
0.1
1
Collector current IC (A)
10
0.1
0.01
0.1
1
Collector current IC (A)
10
Safe operation area
100
Non repetitive pulse
TC=25˚C
10 ICP
IC
1
DC
t=10ms
t=1ms
0.1
103
102
10
1
Rth t
(1)PT=10V×0.3A(3W) and without heat sink
(2)PT=10V×1A(10W) and with a 100×100×2mm Al heat sink
(1)
(2)
0.01
1
10
100
1 000
Collector-emitter voltage VCE (V)
101
103
102
101
1 10
Time t (s)
102 103 104
2 SJD00038BED


Features Datasheet pdf Power Transistors www.DataSheet4U.com 2 SB1054 Silicon PNP triple diffusion pla nar type For high power amplification C omplementary to 2SD1485 ■ Features Excellent collector current IC charac teristics of forward current transfer r atio hFE • Wide safe operation area High transition frequency fT • Ful l-pack package which can be installed t o the heat sink with one screw 21.0±0. 5 15.0±0.2 Unit: mm 15.0±0.3 (0.7) 5.0±0.2 (3.2) 11.0±0.2 φ 3.2±0.1 (3.5) Solder Dip 2.0±0.2 1.1±0.1 2 .0±0.1 0.6±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector- base voltage (Emitter open) Collector-e mitter voltage (Base open) Emitter-base voltage (Collector open) Collector cur rent Peak collector current Collector p ower dissipation Ta = 25°C Junction te mperature Storage temperature Tj Tstg S ymbol VCBO VCEO VEBO IC ICP PC Rating 100 −100 −5 −5 −8 60 3 150 55 to +150 °C °C Unit V V V A A W 1 16.2±0.5 5.45±0.3 10.9±0.5 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-92 TOP-3F-A1 Package ■ Ele.
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