www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/01/25 REVISED DATE :
GT6924E
N-CHANNEL MOSFET WITH SCHOT...
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/01/25 REVISED DATE :
GT6924E
N-CHANNEL MOSFET WITH
SCHOTTKY DIODE
BVDSS RDS(ON) ID
20V 600m 1A
The GM2306 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Description
*Lower on-resistance *Fast Switching Characteristic *Included
Schottky Diode
Features
Package Dimensions
REF. A B C D E F
Millimeter Min. 2.70 2.60 1.40 0.30 0 0° Max. 3.10 3.00 1.80 0.55 0.10 10°
REF. G H I J K L
Dimensions Millimeter 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF.
Absolute Maximum Ratings
Parameter Drain-Source Voltage (MOSFET) Gate-Source Voltage (MOSFET) Continuous Drain Current3 (MOSFET) 3 Continuous Drain Current (MOSFET) Pulsed Drain Current1 (MOSFET) Reverse Voltage (
Schottky) Average Forward Current (
Schottky) Pulsed Forward Current1 (
Schottky) Total Power Dissipation (MOSFET) Total Power Dissipation (
Schottky)
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM VKA IF IFM PD @TA=25 Tj, Tstg Symbol Rthj-a
Ratings 20 ±6 1.0 0.8 8 20 0.5 2.0 0.9 0.9 -55 ~ +125 Value 110 110
Unit V V A A A V A A W W
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3 3
(MOSFET) (
Schottky) M ax. M ax.
Thermal Resistance Junction-ambient
Unit /W /W
GT6924E
Page: 1/4
ISSUED DATE :2006/01/25 REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage
Brea...