GTC9926E

www.DataSheet4U.com ISSUED DATE :2005/01/07 REVISED DATE :2006/12/25B GTC9926E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 28m 4.6A The GTC9926E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low on-resistance *Capable of 2.5V gate drive *Low drive current *Surface mount package Description Features Package Dimensions REF. A A1 b c D Millimeter Min. Max. 0.05 0.19 0.09 2.90 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. Max. 6.20 4.30 0.45 0° 6.60 4.50 0.75 8° 0.65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @Ta=25 Tj, Tstg Ratings 20 ±12 4.6 3.7 20 1 0.008 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient Max. Symbol Rthj-a Value 125 Unit /W GTC9926E Page: 1/4 ISSUED DATE :2005/01/07 REVISED DATE :2006/12/25B Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 20 0.5 Typ. 0.1 9.7 12.5 1 6.5 820 934 860 510 231 164 137 Max. ±10 1 25 28 40 pF ns nC Unit V V/ V S uA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA ...