GTS9926

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/05/08 REVISED DATE :2006/07/27B GTS9926 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 28m 6A Description The GTS9926 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low on-resistance *Capable of 2.5V gate drive *Low drive current Features Package Dimensions REF. A A1 b c D Millimeter Min. 0.05 0.19 0.09 2.90 Max. 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. 6.20 4.30 0.45 0° Max. 6.60 4.50 0.75 8° 0.65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current ,VGS@4.5V Drain Current ,VGS@4.5V Pulsed Drain Current Power Dissipation Operating Junction and Storage Temperature Range 1, 3 3 Symbol VDS VGS ID @Ta=25 ID @Ta=70 IDM PD @Ta=25 Tj, Tstg Ratings 20 ±12 6 4.8 20 1 -55 ~ +150 0.008 Unit V V A A A W W/ Linear Derating Factor Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Value 125 Unit /W GTS9926 Page: 1/4 ISSUED DATE :2006/05/08 REVISED DATE :2006/07/27B Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 20 0.5 Typ. 0.03 20 23 4.5 7 30 70 40 65 1035 320 150 Max. 1.2 ±100 1 25 28 38 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ...