GTS9928E

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2004/10/13 REVISED DATE :2005/08/10B GTS9928E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 22m 5A The GTS9928E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low on-resistance *Capable of 2.5V gate drive *Optimal DC/DC battery application Description Features Package Dimensions REF. A A1 b c D Millimeter Min. 0.05 0.19 0.09 2.90 Max. 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. 6.20 4.30 0.45 0° Max. 6.60 4.50 0.75 8° 0.65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current , [email protected] Drain Current , [email protected] Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 1 3 3 Symbol VDS VGS ID @Ta=25 ID @Ta=70 IDM PD @Ta=25 Tj, Tstg Ratings 20 12 5.0 3.5 25 1 0.008 -55 ~ +150 Unit V V A A A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Ratings 125 Unit /W 1/6 ISSUED DATE :2004/10/13 REVISED DATE :2005/08/10B Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 20 0.5 Typ. 0.02 21 15.9 1.5 7.4 6.2 9 30 11 530 245 125 Max. 10 1 25 22 28 pF ns nC Unit V V/ V S uA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V...