GU6679

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/06/28 REVISED DATE : GU6679 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 9m -75A The GU6679 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Description Features Package Dimensions REF. A b L4 c L3 L1 E Millimeter REF. Min. Max. 4.40 4.80 c2 0.76 1.00 b2 0.00 0.30 B D 0.36 0.5 e 1.50 REF. L 2.29 2.79 9.80 10.4 L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 8.6 9.0 2.54 REF. 14.6 15.8 0˚ 8˚ 1.27 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings -30 25 -75 -50 -300 89 0.71 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-case Rthj-amb Value 1.4 62 Unit /W /W GU6679 Page: 1/4 ISSUED DATE :2005/06/28 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Volta...