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H5N2519P Dataheets PDF



Part Number H5N2519P
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet H5N2519P DatasheetH5N2519P Datasheet (PDF)

www.DataSheet4U.com H5N2519P Silicon N Channel MOS FET High Speed Power Switching REJ03G0478-0200 Rev.2.00 Nov.19.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Avalanche energy Channel dissipation Channel to case the.

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www.DataSheet4U.com H5N2519P Silicon N Channel MOS FET High Speed Power Switching REJ03G0478-0200 Rev.2.00 Nov.19.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR Note3 IAP EARNote3 Pch Note2 θch-c Tch Tstg Note1 Ratings 250 ±30 65 195 65 22 30.2 150 0.833 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C Rev.2.00 Nov. 19, 2004 page 1 of 6 H5N2519P Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 250 — — 3.0 28 — — — — — — — — — — — — — — Typ — — — — 47 0.029 4900 700 75 65 310 220 220 120 28 52 1.10 200 1.6 Max — 1 ±0.1 4.5 — 0.035 — — — — — — — — — — 1.65 — — Unit V µA µA V S Ω pF pF pF ns ns ns ns nC nC nC V ns µC Test conditions ID = 10 mA, VGS = 0 VDS = 250 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 32.5 A, VDS = 10 V Note4 ID = 32.5 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 32.5 A VGS = 10 V RL = 3.9 Ω Rg = 10 Ω VDD = 200 V VGS = 10 V ID = 65 A IF = 65 A, VGS = 0 Note4 IF = 65 A, VGS = 0 diF/dt = 100 A/µs Rev.2.00 Nov. 19, 2004 page 2 of 6 H5N2519P Main Characteristics Power vs. Temperature Derating 200 Pch (W) 1000 300 ID (A) Maximum Safe Operation Area 150 100 30 10 3 DC Op PW er at = 1m 10 m s( 1s 10 s 10 µ 0µ s s Channel Dissipation Drain Current 100 ion (T ho c= t) 25 50 Operation in 1 this area is limited by RDS(on) °C ) 0.3 0.1 0 50 100 150 Tc (°C) 200 1 Case Temperature Ta = 25°C 30 3 10 100 300 1000 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 100 7V 6.5 V ID (A) Typical Output Characteristics 100 10 V Pulse Test 6V 80 VDS = 10 V Pulse Test ID (A) 80 60 5.5 V 40 5V VGS = 4.5 V 0 4 8 12 Drain to Source Voltage 16 20 VDS (V) 60 Drain Current Drain Current 40 20 20 Tc = 75°C 25°C –25°C 8 10 VGS (V) 0 2 4 6 Gate to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(o.


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