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HAT2170H Dataheets PDF



Part Number HAT2170H
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N-Channel MOSFET
Datasheet HAT2170H DatasheetHAT2170H Datasheet (PDF)

HAT2170H Silicon N Channel MOS FET Power Switching Features • High speed switching • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 3.3 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 4 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation.

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HAT2170H Silicon N Channel MOS FET Power Switching Features • High speed switching • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 3.3 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 4 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAPNote2 EARNote2 PchNote3 θch-C Tch Tstg REJ03G0121-0500 Rev.5.00 Sep 26, 2005 5 D SSS 123 1, 2, 3 Source 4 Gate 5 Drain Ratings 40 ±20 45 180 45 30 72 30 4.17 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C/W °C °C Rev.5.00, Sep 26, 2005, page 1 of 7 HAT2170H Electrical Characteristics Item Symbol Min Drain to source breakdown voltage V(BR)DSS 40 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS — Zero gate voltage drain current IDSS — Gate to source cutoff voltage VGS(off) 1.5 Static drain to source on state resistance RDS(on) — RDS(on) — Forward transfer admittance |yfs| 39 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Gate Resistance Rg — Total gate charge Qg — Gate to source charge Qgs — Gate to drain charge Qgd — Turn-on delay time td(on) — Rise time tr — Turn-off delay time td(off) — Fall time tf — Body–drain diode forward voltage VDF — Body–drain diode reverse recovery trr — time Notes: 4. Pulse test Typ — — — — — 3.3 3.7 65 4650 900 285 0.5 62 18 7.0 15 43 44 7.1 0.84 40 Max — — ±10 1 3.0 4.2 5.0 — — — — — — — — — — — — 1.1 — Unit V V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns ns V ns (Ta = 25°C) Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 40 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 22.5 A, VGS = 10 VNote4 ID = 22.5 A, VGS = 7 VNote4 ID = 22.5 A, VDS = 10 VNote4 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, VGS = 10 V, ID = 45 A VGS = 10 V, ID = 22.5 A, VDD ≅ 10 V, RL = 0.44 Ω, Rg = 4.7 Ω IF = 45 A, VGS = 0Note4 IF = 45 A, VGS = 0, diF/ dt = 100 A/ µs Rev.5.00, Sep 26, 2005, page 2 of 7 Channel Dissipation Pch (W) HAT2170H Main Characteristics Power vs. Temperature Derating 40 30 20 10 0 50 100 150 200 Case Temperature Tc (°C) Drain Current ID (A) Typical Output Characteristics 50 10 V 4V 40 3.6 V 3.4 V 30 20 3.2 V 10 VGS = 3.0 V Pulse Test 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 500 Pulse Test 400 300 200 ID = 50 A 100 20 A 10 A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS(on) (mV) Rev.5.00, Sep 26, 2005, page 3 of 7 Drain to Source On State Resistance RDS(on) (mΩ) Drain Current ID (A) Drain Current ID (A) Maximum Safe Operation Area 500 100 10 DCPOWpe=rat1io01nmmss 10010µsµs 1 Operation in this area is limited by RDS(on) 0.1 Tc = 25°C 0.01 1 shot Pulse 0.1 0.3 1 3 10 30 100 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 50 VDS = 10 V Pulse Test 40 30 20 Tc = 75°C 10 0 2 25°C –25°C 4 6 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 30 10 VGS = 7 V 3 10 V 1 0.3 0.1 1 3 10 30 100 300 1000 Drain Current ID (A) HAT2170H Static Drain to Source on State Resistance RDS(on) (mΩ) Static Drain to Source on State Resistance vs. Temperature 10 Pulse Test 8 ID = 10 A, 20 A 50 A 6 4 VGS = 7 V 10 V 2 10 A, 20 A, 50 A 0 -25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Body-Drain Diode Reverse Recovery Time 100 50 Reverse Recovery Time trr (ns) Drain to Source Voltage VDS (V) 20 10 0.1 0.3 di / dt = 100 A / µs VGS = 0, Ta = 25°C 1 3 10 30 100 Reverse Drain Current IDR (A) Dynamic Input Characteristics 50 ID = 45 A 40 30 VDD = 25 V VDD = 5 V 10 V 25 V 20 VGS 16 12 20 VDS 8 10 V 10 4 5V 0 0 20 40 60 80 100 Gate Charge Qg (nc) Gate to Source Voltage VGS (V) Switching Time t (ns) Capacitance C (pF) Forward Transfer Admittance |yfs| (S) Forward Transfer Admittance vs. Drain Current 1000 300 100 Tc = –25°C 30 10 75°C 3 25°C 1 0.3 VDS = 10 V Pulse Test 0.1 0.1 0.3 1 3 10 30 100 Drain Current ID (A) 10000 3000 1000 300 100 Typical Capacitance vs. Drain to Source Voltage Ciss Coss Crss 30 VGS = 0 f = 1 MHz 10 0 10 20 30 40 Drain to Source Voltage VDS (V) 1000 Switching Characteristics 300 100 tr td(off) 30 td(on) 10 tr 3 VGS = 10 V, VDD = 10 V Rg = 4.7 Ω, PW = 5 µS 0.1 0.2 0.5 1 2 5.


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