Document
HAT2170H
Silicon N Channel MOS FET Power Switching
Features
• High speed switching • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance
RDS(on) = 3.3 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK )
5
1 234
4 G
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C
Symbol
VDSS VGSS
ID ID(pulse)Note1
IDR IAPNote2 EARNote2 PchNote3 θch-C
Tch
Tstg
REJ03G0121-0500 Rev.5.00
Sep 26, 2005
5 D
SSS 123
1, 2, 3 Source
4
Gate
5
Drain
Ratings 40 ±20 45 180 45 30 72 30 4.17 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
°C/W °C °C
Rev.5.00, Sep 26, 2005, page 1 of 7
HAT2170H
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
40
Gate to source breakdown voltage
V(BR)GSS
±20
Gate to source leak current
IGSS
—
Zero gate voltage drain current
IDSS
—
Gate to source cutoff voltage
VGS(off)
1.5
Static drain to source on state resistance
RDS(on)
—
RDS(on)
—
Forward transfer admittance
|yfs|
39
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Gate Resistance
Rg
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body–drain diode forward voltage
VDF
—
Body–drain diode reverse recovery
trr
—
time
Notes: 4. Pulse test
Typ — — — — — 3.3 3.7 65 4650 900 285 0.5 62 18 7.0 15 43 44 7.1 0.84 40
Max — — ±10 1 3.0 4.2 5.0 — — — — — — — — — — — — 1.1 —
Unit V V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns ns V ns
(Ta = 25°C)
Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 40 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 22.5 A, VGS = 10 VNote4 ID = 22.5 A, VGS = 7 VNote4 ID = 22.5 A, VDS = 10 VNote4 VDS = 10 V, VGS = 0, f = 1 MHz
VDD = 10 V, VGS = 10 V, ID = 45 A
VGS = 10 V, ID = 22.5 A, VDD ≅ 10 V, RL = 0.44 Ω, Rg = 4.7 Ω
IF = 45 A, VGS = 0Note4 IF = 45 A, VGS = 0, diF/ dt = 100 A/ µs
Rev.5.00, Sep 26, 2005, page 2 of 7
Channel Dissipation Pch (W)
HAT2170H
Main Characteristics
Power vs. Temperature Derating 40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Drain Current ID (A)
Typical Output Characteristics
50
10 V
4V
40
3.6 V
3.4 V
30
20
3.2 V
10
VGS = 3.0 V
Pulse Test
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
500 Pulse Test
400
300
200
ID = 50 A
100 20 A
10 A
0
4
8
12
16 20
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS(on) (mV)
Rev.5.00, Sep 26, 2005, page 3 of 7
Drain to Source On State Resistance RDS(on) (mΩ)
Drain Current ID (A)
Drain Current ID (A)
Maximum Safe Operation Area
500
100 10
DCPOWpe=rat1io01nmmss 10010µsµs
1 Operation in this area is limited by RDS(on)
0.1
Tc = 25°C 0.01 1 shot Pulse
0.1 0.3 1 3
10 30 100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50 VDS = 10 V Pulse Test
40
30
20
Tc = 75°C 10
0
2
25°C –25°C
4
6
8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance vs. Drain Current
100 Pulse Test
30
10 VGS = 7 V
3 10 V
1
0.3
0.1 1 3 10 30 100 300 1000
Drain Current ID (A)
HAT2170H
Static Drain to Source on State Resistance RDS(on) (mΩ)
Static Drain to Source on State Resistance vs. Temperature
10 Pulse Test
8 ID = 10 A, 20 A 50 A
6
4 VGS = 7 V 10 V
2
10 A, 20 A, 50 A
0 -25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse Recovery Time
100
50
Reverse Recovery Time trr (ns)
Drain to Source Voltage VDS (V)
20
10 0.1 0.3
di / dt = 100 A / µs VGS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
50 ID = 45 A
40 30 VDD = 25 V
VDD = 5 V 10 V
25 V
20 VGS
16
12
20
VDS
8
10 V
10
4
5V
0
0
20 40 60 80 100
Gate Charge Qg (nc)
Gate to Source Voltage VGS (V) Switching Time t (ns)
Capacitance C (pF)
Forward Transfer Admittance |yfs| (S)
Forward Transfer Admittance vs. Drain Current
1000
300
100 Tc = –25°C
30
10
75°C
3
25°C
1
0.3
VDS = 10 V
Pulse Test 0.1
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
10000 3000 1000 300 100
Typical Capacitance vs. Drain to Source Voltage
Ciss
Coss Crss
30
VGS = 0
f = 1 MHz 10
0
10
20
30
40
Drain to Source Voltage VDS (V)
1000
Switching Characteristics
300
100
tr td(off)
30 td(on)
10
tr
3
VGS = 10 V, VDD = 10 V
Rg = 4.7 Ω, PW = 5 µS
0.1 0.2 0.5 1 2 5.