MP4021

www.DataSheet4U.com TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One) MP4021 MP4021 High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching Industrial Applications Unit: mm Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25°C) High collector current: IC (DC) = 2 A (max) High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Zener diode included between collector and base. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1-device operation) Collector power dissipation (4-device operation) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating 85 100 ± 15 8 2 3 0.5 2.0 Unit V V V A A W JEDEC JEITA TOSHIBA ― ― 2-25A1A Weight: 2.1 g (typ.) PT Tj Tstg 4.0 150 −55 to 150 W °C °C Array Configuration 3 4 5 6 7 8 9 2 1 R1 R2 10 R1 ≈ 5 kΩ, R2 ≈ 300 Ω 1 2004-07-01 www.DataSheet4U.com MP4021 Thermal Characteristics Characteristics Thermal resistance from junction to ambient (4-device operation, Ta = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 °C Symbol Max Unit ΣRth (j-a) 31.3 °C/W Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Collector cut...