MP4025

www.DataSheet4U.com MP4025 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (darlington power transistor 4 in 1) MP4025 High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching · · · · · Small package by full molding (SIP 10 pin) Built-in resistance (RB). Surge voltage is clamped by zener diode (C-B). Low VCE (sat): VCE (sat) = 1.2 V (max) (IC = 0.5 A, VBH = 4.2 V) High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 0.7 A) Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Input voltage DC Collector current Pulse Collector power dissipation (1 device operation) Collector power dissipation (4 devices operation) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO VB IC ICP PC PT Tj Tstg Rating 50 60 ± 10 6 20 1.5 A 2.0 2.0 4.0 150 -55~150 W W °C °C Unit V V V V Array Configuration 2 RB 3 4 5 6 7 8 9 1 R1 R2 RB » 3.6 kW, R1 » 5 kW, R2 » 300 W 10 000707EAA2 · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause...