Applications. 2SJ630 Datasheet

2SJ630 Datasheet PDF


Part

2SJ630

Description

General-Purpose Switching Device Applications

Manufacture

Sanyo Semicon Device

Page 4 Pages
Datasheet
Download 2SJ630 Datasheet


2SJ630 Datasheet
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Ordering number : ENA0489
2SJ630
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
2SJ630 General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (600mm2!0.8mm)
Tc=25°C
Ratings
--12
±8
--6
--24
1.5
3.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : MD
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=--1mA, VGS=0V
VDS=--12V, VGS=0V
VGS=±6.4V, VDS=0V
VDS=--6V, ID=--1mA
VDS=--6V, ID=--3A
ID=--3A, VGS=--4.5V
ID=--1.5A, VGS=--2.5V
ID=--0.3A, VGS=--1.8V
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
--12
--0.3
5.7
Ratings
typ
max
Unit
V
--10 µA
±10 µA
--1.0 V
9.5 S
45 58 m
57 80 m
78 112 m
940 pF
230 pF
180 pF
12 ns
143 ns
71 ns
89 ns
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
81006PA MS IM TC-00000120 No. A0489-1/4

2SJ630 Datasheet
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm (typ)
7007A-003
Top View
4.5
1.6
1
0.4
2
0.5
1.5
3.0
3
2SJ630
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=--6V, VGS=--4.5V, ID=--6A
VDS=--6V, VGS=--4.5V, ID=--6A
VDS=--6V, VGS=--4.5V, ID=--6A
IS=--6A, VGS=0V
min
Switching Time Test Circuit
Ratings
typ
11
1.6
2.8
--0.95
max
--1.5
Unit
nC
nC
nC
V
1.5
0.4
VIN
0V
--4.5V
VIN
PW=10µs
D.C.1%
G
VDD= --6V
ID= --3A
RL=2
D VOUT
2SJ630
P.G 50S
0.75
Bottom View
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
ID -- VDS
--6
--5 --1.8V --1.5V
--4
--3
--2
--1 VGS= --1.0V
0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V IT11389
--9
VDS= --6V
--8
ID -- VGS
--7
--6
--5
--4
--3
--2
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Gate-to-Source Voltage, VGS -- V IT11390
No. A0489-2/4


Features Datasheet pdf www.DataSheet4U.com Ordering number : E NA0489 2SJ630 SANYO Semiconductors D ATA SHEET P-Channel Silicon MOSFET 2SJ 630 Features • • • General-Purpo se Switching Device Applications Low O N-resistance. Ultrahigh-speed switching . 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter D rain-to-Source Voltage Gate-to-Source V oltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Ch annel Temperature Storage Temperature S ymbol VDSS VGSS ID IDP PD Tch Tstg PW 10µs, duty cycle≤1% Mounted on a ce ramic board (600mm2!0.8mm) Tc=25°C Con ditions Ratings --12 ±8 --6 --24 1.5 3 .5 150 --55 to +150 Unit V V A A W W ° C °C Electrical Characteristics at Ta =25°C Parameter Drain-to-Source Breakd own Voltage Zero-Gate Voltage Drain Cur rent Gate-to-Source Leakage Current Cut off Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resist ance Input Capacitance Output Capacitan ce Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time.
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