2SK3535-01

www.DataSheet4U.com 2SK3535-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Applications for Switching Foot Print Pattern Absolute Maximum Ratings at Tc=25°C ( unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX ID ID(puls] VGS IAR *2 EAS *1 dV DS /dt dV/dt *3 PD Tch Tstg Ratings 250 220 ±37 ±3.4 *4 ±148 ±30 37 251.9 20 5 2.4 *4 270 +150 -55 to +150 Unit V V A A A V A mJ kV/µs kV/µs W W °C °C < *2 Tch =150°C *3 Remarks VGS=30V Ta=25°C Equivalent circuit schematic (4) Drain(D) (1) Gate(G) VDS < =250V Ta=25°C (2) Source(S) [signal line] (3) Source(S) [power line] IF < *1 L=0.309mH, Vcc=48V, See to Avalanche Energy Graph = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < *4 Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area:500mm2) Electrical characteristics atTc =25°C ( unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton T...