MOSFET. 2SK3535-01 Datasheet

2SK3535-01 Datasheet PDF


Part

2SK3535-01

Description

N-CHANNEL SILICON POWER MOSFET

Manufacture

Fuji Electric

Page 4 Pages
Datasheet
Download 2SK3535-01 Datasheet


2SK3535-01 Datasheet
2SK3535-01www.DataSheet4U.com
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Applications
for Switching
Foot Print Pattern
Absolute Maximum Ratings at Tc=25°C
( unless otherwise specified)
Item
Symbol
Drain-source voltage
VDS
VDSX
Continuous drain current
ID
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
ID(puls]
VGS
IAR *2
EAS *1
dVDS/dt
Ratings
250
220
±37
±3.4
±148
±30
37
251.9
20
*4
Unit
V
V
A
A
A
V
A
mJ
kV/µs
Remarks
VGS=30V
Ta=25°C
VDS <=250V
Equivalent circuit schematic
(4) Drain(D)
(1) Gate(G)
(2) Source(S)
[signal line]
(3) Source(S)
[power line]
Peak Diode Recovery dV/dt
Max. power dissipation
dV/dt *3
PD
5
2.4 *4
kV/µs
W Ta=25°C
270 W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=0.309mH, Vcc=48V, See to Avalanche Energy Graph *2 Tch =<150°C *3 IF<= -ID, -di/dt=50A/µs, Vcc <= BVDSS, Tch<= 150°C
*4 Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area:500mm2)
Electrical characteristics atTc =25°C ( unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID=250µA VGS=0V
ID= 250µA VDS=VGS
VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V VDS=0V
ID=12.5A VGS=10V
Tch=25°C
Tch=125°C
ID=12.5A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=72V ID=12.5A
VGS=10V
RGS=10
VCC=72V
ID=25A
VGS=10V
L=309 µH Tch=25°C
IF=25A VGS=0V Tch=25°C
IF=25A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
250
3.0
V
5.0 V
25 µA
250
10 100
nA
75 100
8 16
m
S
2000 3000
pF
220 330
15 30
20 30 ns
30 45
60 90
20 30
44 66 nC
14 21
16 24
37 A
1.10 1.65 V
0.45 µs
1.5 µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Rth(ch-a)
*4
Test Conditions
channel to case
channel to ambient
channel to ambient
Min. Typ.
Max. Units
0.463 °C/W
87.0 °C/W
52.0 °C/W
1

2SK3535-01 Datasheet
2SK3535-01
Characteristics
Allowable Power Dissipation
PD=f(Tc)
5
Surface mounted on
1000mm2,t=1.6mm FR-4 PCB
4 (Drain pad area : 500mm2)
3
2
1
0
0 25 50 75 100 125 150
Tc [ °C]
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
100
20V
80 10V
8V
7.5V
60
7.0V
40
6.5V
20 6.0V
VGS=5.5V
0
0 2 4 6 8 10 12
VDS [V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0.1
1 10
ID [A]
100
FUJI POWER MOSFET
Allowable Power Dissipation
PD=f(Tc)
300
250
200
150
100
50
0
0 25 50 75 100 125 150
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.25
VGS=
0.20 5.5V 6.0V
0.15
0.10
6.5V 7.0V
7.5V
8V
10V
20V
0.05
0.00
0
20 40 60 80 100
ID [A]
2


Features Datasheet pdf www.DataSheet4U.com 2SK3535-01 Super FA P-G Series Features High speed switchin g Low on-resistance No secondary breado wn Low driving power Avalanche-proof F UJI POWER MOSFET 200304 N-CHANNEL SILI CON POWER MOSFET Outline Drawings [mm] Applications for Switching Foot Print Pattern Absolute Maximum Ratings at Tc =25°C ( unless otherwise specified) It em Drain-source voltage Continuous drai n current Pulsed drain current Gate-sou rce voltage Repetitive or non-repetitiv e Maximum Avalanche Energy Maximum Drai n-Source dV/dt Peak Diode Recovery dV/d t Max. power dissipation Operating and storage temperature range Symbol V DS V DSX ID ID(puls] VGS IAR *2 EAS *1 dV DS /dt dV/dt *3 PD Tch Tstg Ratings 250 2 20 ±37 ±3.4 *4 ±148 ±30 37 251.9 20 5 2.4 *4 270 +150 -55 to +150 Unit V V A A A V A mJ kV/µs kV/µs W W °C °C < *2 Tch =150°C *3 Remarks VGS=30V Ta =25°C Equivalent circuit schematic (4 ) Drain(D) (1) Gate(G) VDS < =250V Ta =25°C (2) Source(S) [signal line] (3) Source(S) [power line] IF < *1 L=.
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