MOSFET. 2SK3811 Datasheet

2SK3811 Datasheet PDF


Part

2SK3811

Description

SWITCHING N-CHANNEL POWER MOSFET

Manufacture

NEC

Page 8 Pages
Datasheet
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2SK3811 Datasheet
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3811
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3811 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance
RDS(on) = 1.8 mMAX. (VGS = 10 V, ID = 55 A)
High Current Rating: ID(DC) = ±110 A
ORDERING INFORMATION
PART NUMBER
2SK3811-ZP
PACKAGE
TO-263 (MP-25ZP)
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±110
±440
Total Power Dissipation (TC = 25°C)
PT1
213
Total Power Dissipation (TA = 25°C)
PT2
1.5
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Avalanche Energy Note3
Tstg 55 to +150
EAS 518
IAR 72
EAR 518
V
V
A
A
W
W
°C
°C
mJ
A
mJ
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 , VGS = 20 0 V, L = 100 µH
3. RG = 25 , Tch(peak) 150°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16737EJ1V0DS00 (1st edition)
Date Published June 2004 NS CP(K)
Printed in Japan
2004

2SK3811 Datasheet
2SK3811
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 40 V, VGS = 0 V
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
IGSS
VGS(off)
| yfs |
RDS(on)
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 55 A
VGS = 10 V, ID = 55 A
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 20 V, ID = 55 A
Rise Time
tr VGS = 10 V
Turn-off Delay Time
td(off)
RG = 0
Fall Time
tf
Total Gate Charge
Gate to Source Charge
QG VDD = 32 V
QGS
VGS = 10 V
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = 110 A
IF = 110 A, VGS = 0 V
Reverse Recovery Time
trr IF = 110 A, VGS = 0 V
Reverse Recovery Charge
Note Pulsed
Qrr di/dt = 100 A/µs
MIN.
2.0
45
TYP.
3.0
89
1.4
17700
2200
1300
54
140
130
21
260
57
83
0.87
60
80
MAX.
10
±100
4.0
1.8
1.5
UNIT
µA
nA
V
S
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D16737EJ1V0DS


Features Datasheet pdf DATA SHEET www.DataSheet4U.com MOS FIEL D EFFECT TRANSISTOR 2SK3811 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION T he 2SK3811 is N-channel MOS Field Effec t Transistor designed for high current switching applications. ORDERING INFOR MATION PART NUMBER 2SK3811-ZP PACKAGE T O-263 (MP-25ZP) FEATURES • Super low on-state resistance RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) • High Current Rating: ID(DC) = ±110 A (TO-26 3) ABSOLUTE MAXIMUM RATINGS (TA = 25° C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drai n Current (DC) (TC = 25°C) Drain Curre nt (pulse) Note1 VDSS VGSS ID(DC) ID(p ulse) PT1 PT2 Tch Tstg 40 ±20 ±110 440 213 1.5 150 −55 to +150 518 72 5 18 V V A A W W °C °C mJ A mJ Total Power Dissipation (TC = 25°C) Total Po wer Dissipation (TA = 25°C) Channel Te mperature Storage Temperature Single Av alanche Energy Note2 Note3 Note3 EAS I AR EAR Repetitive Avalanche Current Re petitive Avalanche Energy Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch =.
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