MOSFET. 2SK3812 Datasheet

2SK3812 Datasheet PDF


Part

2SK3812

Description

SWITCHING N-CHANNEL POWER MOSFET

Manufacture

NEC

Page 8 Pages
Datasheet
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2SK3812 Datasheet
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3812
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3812 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance
RDS(on)1 = 2.8 mMAX. (VGS = 10 V, ID = 55 A)
RDS(on)2 = 3.7 mMAX. (VGS = 4.5 V, ID = 55 A)
High current rating: ID(DC) = ±110 A
ORDERING INFORMATION
PART NUMBER
2SK3812-ZP
PACKAGE
TO-263 (MP-25ZP)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±110
±440
Total Power Dissipation (TC = 25°C)
PT1
213
Total Power Dissipation (TA = 25°C)
PT2
1.5
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Avalanche Energy Note3
Tstg 55 to +150
EAS 397
IAR 63
EAR 397
V
V
A
A
W
W
°C
°C
mJ
A
mJ
(TO-263)
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 , VGS = 20 0 V, L = 100 µH
3. Tch(peak) 150°C, RG = 25
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16738EJ1V0DS00 (1st edition)
Date Published September 2004 NS CP(K)
Printed in Japan
2004

2SK3812 Datasheet
2SK3812
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 60 V, VGS = 0 V
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
IGSS
VGS(off)
| yfs |
RDS(on)1
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 55 A
VGS = 10 V, ID = 55 A
RDS(on)2 VGS = 4.5 V, ID = 55 A
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 55 A
Rise Time
tr VGS = 10 V
Turn-off Delay Time
Fall Time
Total Gate Charge
td(off)
tf
QG
RG = 0
VDD = 48 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
Body Diode Forward Voltage Note
Reverse Recovery Time
QGD
VF(S-D)
trr
ID = 110 A
IF = 110 A, VGS = 0 V
IF = 110 A, VGS = 0 V
Reverse Recovery Charge
Note Pulsed
Qrr di/dt = 100 A/µs
MIN.
1.5
50
TYP.
2.0
110
2.3
2.6
16800
1600
1000
42
160
140
15
250
41
66
0.87
53
74
MAX.
10
±100
2.5
2.8
3.7
1.5
UNIT
µA
nA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D16738EJ1V0DS


Features Datasheet pdf DATA SHEET www.DataSheet4U.com MOS FIEL D EFFECT TRANSISTOR 2SK3812 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION T he 2SK3812 is N-channel MOS Field Effec t Transistor designed for high current switching applications. ORDERING INFOR MATION PART NUMBER 2SK3812-ZP PACKAGE T O-263 (MP-25ZP) FEATURES • Super low on-state resistance RDS(on)1 = 2.8 m MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A) • High current rating: ID(DC) = ± 110 A ABSOLUTE MAXIMUM RATINGS (TA = 2 5°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) D rain Current (DC) (TC = 25°C) Drain Cu rrent (pulse) Note1 (TO-263) 60 ±20 110 ±440 213 1.5 150 −55 to +150 39 7 63 397 V V A A W W °C °C mJ A mJ V DSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch T stg Total Power Dissipation (TC = 25° C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperatur e Single Avalanche Energy Note2 Note3 N ote3 EAS IAR EAR Repetitive Avalanche Current Repetitive Avalanche Energy Notes .
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