POWER MOSFET. 2SK3813 Datasheet

2SK3813 MOSFET. Datasheet pdf. Equivalent

Part 2SK3813
Description SWITCHING N-CHANNEL POWER MOSFET
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2SK3813
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3813
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3813 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance
RDS(on)1 = 5.3 mMAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 7.1 mMAX. (VGS = 4.5 V, ID = 30 A)
Low Ciss: Ciss = 5500 pF TYP.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3813
TO-251 (MP-3)
2SK3813-Z
TO-252 (MP-3Z)
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±60
±240
Total Power Dissipation (TC = 25°C)
PT1
84
Total Power Dissipation (TA = 25°C)
PT2
1.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Avalanche Energy Note3
Tstg 55 to +150
EAS 137
IAR 37
EAR 137
V
V
A
A
W
W
°C
°C
mJ
A
mJ
(TO-252)
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 , VGS = 20 0 V, L = 100 µH
3. Tch(peak) 150°C, RG = 25
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16739EJ2V0DS00 (2nd edition)
Date Published September 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2004



2SK3813
2SK3813
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 40 V, VGS = 0 V
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
IGSS
VGS(off)
| yfs |
RDS(on)1
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 30 A
VGS = 10 V, ID = 30 A
RDS(on)2 VGS = 4.5 V, ID = 30 A
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 20 V, ID = 30 A
Rise Time
tr VGS = 10 V
Turn-off Delay Time
Fall Time
Total Gate Charge
td(off)
tf
QG
RG = 0
VDD = 32 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
Body Diode Forward Voltage Note
Reverse Recovery Time
QGD
VF(S-D)
trr
ID = 60 A
IF = 60 A, VGS = 0 V
IF = 60 A, VGS = 0 V
Reverse Recovery Charge
Note Pulsed
Qrr di/dt = 100 A/µs
MIN.
1.5
21
TYP.
2.0
42
4.2
5.3
5500
740
490
25
8.5
81
10
96
18
23.5
0.94
35
31
MAX.
10
±100
2.5
5.3
7.1
1.5
UNIT
µA
nA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D16739EJ2V0DS





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