Silicon MOSFET. 2SK3817 Datasheet

2SK3817 MOSFET. Datasheet pdf. Equivalent

Part 2SK3817
Description N-Channel Silicon MOSFET
Feature www.DataSheet4U.com Ordering number : ENN8055 2SK3817 2SK3817 Features • • • • • N-Channel Silic.
Manufacture Sanyo Semicon Device
Datasheet
Download 2SK3817 Datasheet

www.DataSheet4U.com Ordering number : ENN8055 2SK3817 2SK 2SK3817 Datasheet
Recommendation Recommendation Datasheet 2SK3817 Datasheet




2SK3817
www.DataSheet4U.com
Ordering number : ENN8055
2SK3817
2SK3817
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Enargy (Single Pulse) *1
Avalanche Current *2
Note : *1 VDD=20V, L=50µH, IAV=60A
*2 L50µH, single pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
PW10µs, duty cycle1%
Tc=25°C
Ratings
60
±20
60
240
1.65
65
150
--55 to +150
135
60
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : K3817
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS= ±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=30A
ID=30A, VGS=10V
ID=30A, VGS=4V
min
60
1.2
24
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
40 S
11.5 15 m
16 22 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2404QA TS IM TB-00000611 No.8055-1/4



2SK3817
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
2093A
10.2
2SK3817
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=30V, VGS=10V, ID=60A
VDS=30V, VGS=10V, ID=60A
VDS=30V, VGS=10V, ID=60A
IS=60A, VGS=0
min
Package Dimensions
unit : mm
2090A
Ratings
typ
3500
500
350
26
230
255
230
67
10.6
10
1.07
max
1.5
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
4.5
1.3
10.2 4.5 1.3
1.2
0.8
123
2.55 2.55
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=30V
ID=30A
RL=1.0
D VOUT
2SK3817
P.G 50S
12
0.8
2.55
3
1.2
2.55
2.55 2.55
0 to 0.3
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
Unclamped Inductive Test Circuit
50
RG
L
DUT
15V
0V
50
VDD
No.8055-2/4





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