MTD5P06V

MTD5P06V Preferred Device Power MOSFET 5 A, 60 V, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Features Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature Pb−Free Packages are Available MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MW) Gate−to−Source Voltage − Continuous − Non−repetitive (tp ≤ 10 ms) Drain Current − Continuous @ 25°C − Continuous @ 100°C − Single Pulse (tp ≤ 10 ms) Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 2) Operating and Storage Temperature Range VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg 60 60 ± 15 ± 25 5 4 18 40 0.27 2.1 −55 to 175 Vdc Vdc Vdc Vpk Adc Apk W W/°C W °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 5 Apk, L = 10 mH, RG = 25 W) EAS 125 mJ Thermal Resistance Junction−to−Case Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) RqJC RqJA RqJA °C/W 3.75 100 71.4 Maximum Lead Temperature for Soldering Purposes, 1/8″ from Cas...