Document
NTHD3101F
MOSFET – Power, P-Channel, Schottky Diode, ChipFET, FETKY, Schottky Barrier Diode
-20 V, -4.4 A, 4.1 A
Features
• Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package • Leadless SMD Package Provides Great Thermal Characteristics • Independent Pinout to each Device to Ease Circuit Design • Trench P−Channel for Low On Resistance • Ultra Low VF Schottky • Pb−Free Packages are Available
Applications
• Li−Ion Battery Charging • High Side DC−DC Conversion Circuits • High Side Drive for Small Brushless DC Motors • Power Management in Portable, Battery Powered Products
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Units
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Steady State
t≤5s Steady State t≤5s
TJ = 25°C TJ = 85°C TJ = 25°C
TJ = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS VGS ID
PD
IDM TJ, TSTG
−20 ±8.0 −3.2 −2.3 −4.4 1.1
2.1 −13 −55 to 150
V V A
W
A °C
Source Current (Body Diode) Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS 2.5 A TL 260 °C
SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value Units
Peak Repetitive Reverse Voltage DC Blocking Voltage
VRRM VR
20 20
V V
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V(BR)DSS −20 V
VR MAX 20 V
MOSFET RDS(on) TYP
64 mW @ −4.5 V 85 mW @ −2.5 V SCHOTTKY DIODE
VF TYP 0.510 V
ID MAX −4.4 A
IF MAX 4.1 A
SA
G
D P−Channel MOSFET
C Schottky Diode
8 1
ChipFET CASE 1206A
STYLE 3
PIN CONNECTIONS
1
A
2
A
S
3
G
4
8
C
7
C
6
D
D
5
D1 M G
MARKING DIAGRAM
18 27 36 45
D1 = Specific Device Code M = Month Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2008
May, 2019 − Rev. 4
1
Publication Order Number: NTHD3101F/D
NTHD3101F
SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Units
Average Rectified Forward Current
Steady State t≤5s
TJ = 25°C
IF
2.2 V 4.1 A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces). THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction−to−Ambient – Steady State (Note 2)
RqJA
Junction−to−Ambient – t ≤ 10 s (Note 2)
RqJA
2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS V(BR)DSS/TJ
VGS = 0 V, ID = −250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3)
IDSS IGSS
VDS = −16 V, VGS = 0 V
TJ = 25°C TJ = 125°C
VDS = 0 V, VGS = ±8.0 V
Gate Threshold Voltage Gate Threshold Temperature Coefficient
VGS(TH) VGS(TH)/TJ
VGS = VDS, ID = −250 mA
Drain−to−Source On−Resistance
RDS(on)
Forward Transconductance CHARGES AND CAPACITANCES
gFS
VGS = −4.5, ID = −3.2 A VGS = −2.5, ID = −2.2 A VGS = −1.8, ID = −1.0 A VDS = −10 V, ID = −2.9 A
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS (Note 4)
VGS = 0 V, f = 1.0 MHz, VDS = −10 V
VGS = −4.5 V, VDS = −10 V, ID = −3.2 A
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = −4.5 V, VDD = −10 V, ID = −3.2 A, RG = 2.4 W
Forward Diode Voltage
VSD
VGS = 0 V, IS = −2.5 A
TJ = 25°C
Min −20
−0.45
Max Units 113 °C/W 60 °C/W
Typ Max Units
V −15 mV/°C
−1.0 −5.0 ±100
mA nA
−1.5 V 2.7 mV/°C
64 80 mW 85 110 120 170 8.0 S
680 pF 100 70 7.4 nC 0.6 1.4 2.5
5.8 ns 11.7 16 12.4
−0.8 −1.2
V
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NTHD3101F
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
DRAIN−SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
tRR
Charge Time Discharge Time
ta VGS = 0 V, IS = −1.0 A , tb dIS/dt = 100 A/ms
Reverse Recovery Charge
QRR
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Maximum Instantaneous Forward Voltage
VF
.