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NTHD3101F Dataheets PDF



Part Number NTHD3101F
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description P-Channel MOSFET
Datasheet NTHD3101F DatasheetNTHD3101F Datasheet (PDF)

NTHD3101F MOSFET – Power, P-Channel, Schottky Diode, ChipFET, FETKY, Schottky Barrier Diode -20 V, -4.4 A, 4.1 A Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package • Leadless SMD Package Provides Great Thermal Characteristics • Independent Pinout to each Device to Ease Circuit Design • Trench P−Channel for Low On Resistance • Ultra Low VF Schottky • Pb−Free Packages are Available Applications • Li−Ion Battery Charging • High Side DC−DC Conve.

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NTHD3101F MOSFET – Power, P-Channel, Schottky Diode, ChipFET, FETKY, Schottky Barrier Diode -20 V, -4.4 A, 4.1 A Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package • Leadless SMD Package Provides Great Thermal Characteristics • Independent Pinout to each Device to Ease Circuit Design • Trench P−Channel for Low On Resistance • Ultra Low VF Schottky • Pb−Free Packages are Available Applications • Li−Ion Battery Charging • High Side DC−DC Conversion Circuits • High Side Drive for Small Brushless DC Motors • Power Management in Portable, Battery Powered Products MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Units Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State t≤5s Steady State t≤5s TJ = 25°C TJ = 85°C TJ = 25°C TJ = 25°C Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature VDSS VGS ID PD IDM TJ, TSTG −20 ±8.0 −3.2 −2.3 −4.4 1.1 2.1 −13 −55 to 150 V V A W A °C Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 2.5 A TL 260 °C SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Units Peak Repetitive Reverse Voltage DC Blocking Voltage VRRM VR 20 20 V V http://onsemi.com V(BR)DSS −20 V VR MAX 20 V MOSFET RDS(on) TYP 64 mW @ −4.5 V 85 mW @ −2.5 V SCHOTTKY DIODE VF TYP 0.510 V ID MAX −4.4 A IF MAX 4.1 A SA G D P−Channel MOSFET C Schottky Diode 8 1 ChipFET CASE 1206A STYLE 3 PIN CONNECTIONS 1 A 2 A S 3 G 4 8 C 7 C 6 D D 5 D1 M G MARKING DIAGRAM 18 27 36 45 D1 = Specific Device Code M = Month Code G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2008 May, 2019 − Rev. 4 1 Publication Order Number: NTHD3101F/D NTHD3101F SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Units Average Rectified Forward Current Steady State t≤5s TJ = 25°C IF 2.2 V 4.1 A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). THERMAL RESISTANCE RATINGS Parameter Symbol Junction−to−Ambient – Steady State (Note 2) RqJA Junction−to−Ambient – t ≤ 10 s (Note 2) RqJA 2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS V(BR)DSS/TJ VGS = 0 V, ID = −250 mA Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) IDSS IGSS VDS = −16 V, VGS = 0 V TJ = 25°C TJ = 125°C VDS = 0 V, VGS = ±8.0 V Gate Threshold Voltage Gate Threshold Temperature Coefficient VGS(TH) VGS(TH)/TJ VGS = VDS, ID = −250 mA Drain−to−Source On−Resistance RDS(on) Forward Transconductance CHARGES AND CAPACITANCES gFS VGS = −4.5, ID = −3.2 A VGS = −2.5, ID = −2.2 A VGS = −1.8, ID = −1.0 A VDS = −10 V, ID = −2.9 A Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD SWITCHING CHARACTERISTICS (Note 4) VGS = 0 V, f = 1.0 MHz, VDS = −10 V VGS = −4.5 V, VDS = −10 V, ID = −3.2 A Turn−On Delay Time td(ON) Rise Time tr Turn−Off Delay Time td(OFF) Fall Time tf DRAIN−SOURCE DIODE CHARACTERISTICS VGS = −4.5 V, VDD = −10 V, ID = −3.2 A, RG = 2.4 W Forward Diode Voltage VSD VGS = 0 V, IS = −2.5 A TJ = 25°C Min −20 −0.45 Max Units 113 °C/W 60 °C/W Typ Max Units V −15 mV/°C −1.0 −5.0 ±100 mA nA −1.5 V 2.7 mV/°C 64 80 mW 85 110 120 170 8.0 S 680 pF 100 70 7.4 nC 0.6 1.4 2.5 5.8 ns 11.7 16 12.4 −0.8 −1.2 V http://onsemi.com 2 NTHD3101F MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min DRAIN−SOURCE DIODE CHARACTERISTICS Reverse Recovery Time tRR Charge Time Discharge Time ta VGS = 0 V, IS = −1.0 A , tb dIS/dt = 100 A/ms Reverse Recovery Charge QRR SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Maximum Instantaneous Forward Voltage VF .


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