Document
www.DataSheet4U.com
MITSUBISHI
PM75B5LA060
FLAT-BASE TYPE INSULATED PACKAGE
PM75B5LA060
FEATURE
a) Adopting new 5th generation IGBT (CSTBT TM ) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.55V @Tj=125°C b) Over-temperature protection by detecting Tj of the CSTBT TM chips and error output is possible from all each conservation upper and lower arm of IPM. c) New small package Reduce the package size by 10%, thickness by 22% from S-DASH series. • 2φ 75A, 600V Current-sense IGBT type inverter • 75A, 600V Current-sense Chopper IGBT • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available from upper arm devices) • UL Recognized Yellow Card No.E80276(N) File No.E80271
APPLICATION Photo voltaic power conditioner
PACKAGE OUTLINES
L A B E L
Dimensions in mm
11 7 19.75 (19.75) 3.25 16 3-2 16 3-2
120 106 16 3-2 15.25 6-2 16 2-φ5.5 MOUNTING HOLES 3
12
17.5
1
5
9
13
19
14.5
B
U
V
W
32
6-M5 NUTS 10.75 12 32.75 23 23 23
11.75
13.5
55
2-φ2.5
17.5
N P
1 22 + – 0.5
(SCREWING DEPTH)
Terminal code
19-■0.5
1. 2. 3. 4. 5. 6. 7.
VUPC UFO UP VUP1 VVPC VFO VP
8. 9. 10. 11. 12. 13. 14.
VVP1 NC NC NC NC VNC VN1
15. 16. 17. 18. 19.
NC UN VN WN Fo
7
13 31
12
Oct. 2005
MITSUBISHI
PM75B5LA060
FLAT-BASE TYPE INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
NC FO 1.5k
VNC WN
VN1
VN
UN
NC NC NC NC
VP VVP1 VVPC VFO
UP VUPC UFO
VUP1
1.5k
1.5k
GND IN Fo
Vcc
GND IN Fo
Vcc
GND IN Fo
Vcc
GND IN Fo
Vcc
GND IN Fo
Vcc
GND SC OT OUT
GND SC OT OUT
GND SC OT OUT
GND SC OT OUT
GND SC OT OUT
B
N
W
V
U
P
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART
Symbol VCES ±IC ±ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C Ratings 600 75 150 390 –20 ~ +150 Unit V A A W °C
CONVERTER PART
Symbol VCES IC ICP PC IF VR(DC) Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation FWDi Forward Current FWDi Rated DC Reverse Voltage Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C TC = 25°C TC = 25°C Ratings 600 75 150 390 75 600 –20 ~ +150 Unit V A A W A V °C
(Note-1)
CONTROL PART
Symbol VD VCIN VFO IFO Parameter Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Condition Applied between : VUP1-VUPC VVP1-VVPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC UN • VN • WN-VNC Applied between : UFO-VUPC, VFO-VVPC, FO-VNC Sink current at UFO, VFO, FO terminals Ratings 20 20 20 20 Unit V V V mA
Oct. 2005
MITSUBISHI
PM75B5LA060
FLAT-BASE TYPE INSULATED PACKAGE
TOTAL SYSTEM
Parameter Supply Voltage Protected by VCC(PROT) SC VCC(surge) Supply Voltage (Surge) Storage Temperature Tstg Isolation Voltage Viso Symbol Condition VD = 13.5 ~ 16.5V, Inverter Part, Tj = +125°C Start Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base, AC 1 min. Ratings 450 500 –40 ~ +125 2500 Unit V V °C Vrms
THERMAL RESISTANCES
Symbol Rth(j-c)Q Rth(j-c)F Rth(j-c)Q Rth(j-c)F Rth(j-c)F Rth(c-f) Parameter Condition Inverter IGBT part (per 1/4 module) Inverter FWDi part (per 1/4 module) Converter IGBT part Converter FWDi upper part Converter FWDi lower part Case to fin, (per 1 module) Thermal grease applied (Note-1) (Note-1) (Note-1) (Note-1) (Note-1) (Note-1) Min. — — — — — — Limits Typ. — — — — — — Max. 0.32 0.53 0.32 0.33 0.53 0.038 Unit
Junction to case Thermal Resistances
°C/W
Contact Thermal Resistance
(Note-1) Tc (under the chip) measurement point is below. (unit : mm) arm axis X Y UP IGBT FWDi 31.2 33.6 4.5 –7.5 VP IGBT FWDi 66.0 66.0 0.6 –8.6 WP FWDi 85.8 –3.1 UN IGBT FWDi 41.6 40.5 0.0 8.0 VN IGBT FWDi 56.2 56.2 –5.5 2.7 WN IGBT FWDi 76.3 76.3 –6.5 2.7
Bottom view
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART
Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Condition VD = 15V, IC = 75A VCIN = 0V (Fig. 1) –IC = 75A, VD = 15V, VCIN = 15V VD = 15V, VCIN = 0V↔15V VCC = 300V, IC = 75A Tj = 125°C Inductive Load VCE = VCES, VCIN = 15V (Fig. 5) Tj = 25°C Tj = 125°C (Fig. 2) Min. — — — 0.3 — — — — — — Limits Typ. 1.7 1.55 2.2 0.7 0.1 0.2 0.9 0.2 — — Max. 2.3 2.0 3.3 1.4 0.2 0.4 1.8 0.4 1 10 Unit V V
Switching Time
µs
(Fig. 3,4) Tj = 25°C Tj = 125°C
Collector-Emitter Cutoff Current
mA
Oct. 2005
MITSUBISHI
PM75B5LA060
FLAT-BASE TYPE INSULATED PACKAGE
CONVERTER PART
Symbol VCE(sat) VEC VFM ton trr tc(on) toff tc(off) ICES Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Forward Voltage Condition VD = 15V, IC = 75A VCIN = 0V, Pulsed (Fig. 1) –IC = 7.