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PM75B5LA060 Dataheets PDF



Part Number PM75B5LA060
Manufacturers Mitsubishi Electric
Logo Mitsubishi Electric
Description Intelligent Power Module
Datasheet PM75B5LA060 DatasheetPM75B5LA060 Datasheet (PDF)

www.DataSheet4U.com MITSUBISHI PM75B5LA060 FLAT-BASE TYPE INSULATED PACKAGE PM75B5LA060 FEATURE a) Adopting new 5th generation IGBT (CSTBT TM ) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.55V @Tj=125°C b) Over-temperature protection by detecting Tj of the CSTBT TM chips and error output is possible from all each conservation upper and lower arm of IPM. c) New small package Reduce the package size by 10%, thickness b.

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www.DataSheet4U.com MITSUBISHI PM75B5LA060 FLAT-BASE TYPE INSULATED PACKAGE PM75B5LA060 FEATURE a) Adopting new 5th generation IGBT (CSTBT TM ) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.55V @Tj=125°C b) Over-temperature protection by detecting Tj of the CSTBT TM chips and error output is possible from all each conservation upper and lower arm of IPM. c) New small package Reduce the package size by 10%, thickness by 22% from S-DASH series. • 2φ 75A, 600V Current-sense IGBT type inverter • 75A, 600V Current-sense Chopper IGBT • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available from upper arm devices) • UL Recognized Yellow Card No.E80276(N) File No.E80271 APPLICATION Photo voltaic power conditioner PACKAGE OUTLINES L A B E L Dimensions in mm 11 7 19.75 (19.75) 3.25 16 3-2 16 3-2 120 106 16 3-2 15.25 6-2 16 2-φ5.5 MOUNTING HOLES 3 12 17.5 1 5 9 13 19 14.5 B U V W 32 6-M5 NUTS 10.75 12 32.75 23 23 23 11.75 13.5 55 2-φ2.5 17.5 N P 1 22 + – 0.5 (SCREWING DEPTH) Terminal code 19-■0.5 1. 2. 3. 4. 5. 6. 7. VUPC UFO UP VUP1 VVPC VFO VP 8. 9. 10. 11. 12. 13. 14. VVP1 NC NC NC NC VNC VN1 15. 16. 17. 18. 19. NC UN VN WN Fo 7 13 31 12 Oct. 2005 MITSUBISHI PM75B5LA060 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM NC FO 1.5k VNC WN VN1 VN UN NC NC NC NC VP VVP1 VVPC VFO UP VUPC UFO VUP1 1.5k 1.5k GND IN Fo Vcc GND IN Fo Vcc GND IN Fo Vcc GND IN Fo Vcc GND IN Fo Vcc GND SC OT OUT GND SC OT OUT GND SC OT OUT GND SC OT OUT GND SC OT OUT B N W V U P MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCES ±IC ±ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C Ratings 600 75 150 390 –20 ~ +150 Unit V A A W °C CONVERTER PART Symbol VCES IC ICP PC IF VR(DC) Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation FWDi Forward Current FWDi Rated DC Reverse Voltage Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C TC = 25°C TC = 25°C Ratings 600 75 150 390 75 600 –20 ~ +150 Unit V A A W A V °C (Note-1) CONTROL PART Symbol VD VCIN VFO IFO Parameter Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Condition Applied between : VUP1-VUPC VVP1-VVPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC UN • VN • WN-VNC Applied between : UFO-VUPC, VFO-VVPC, FO-VNC Sink current at UFO, VFO, FO terminals Ratings 20 20 20 20 Unit V V V mA Oct. 2005 MITSUBISHI PM75B5LA060 FLAT-BASE TYPE INSULATED PACKAGE TOTAL SYSTEM Parameter Supply Voltage Protected by VCC(PROT) SC VCC(surge) Supply Voltage (Surge) Storage Temperature Tstg Isolation Voltage Viso Symbol Condition VD = 13.5 ~ 16.5V, Inverter Part, Tj = +125°C Start Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base, AC 1 min. Ratings 450 500 –40 ~ +125 2500 Unit V V °C Vrms THERMAL RESISTANCES Symbol Rth(j-c)Q Rth(j-c)F Rth(j-c)Q Rth(j-c)F Rth(j-c)F Rth(c-f) Parameter Condition Inverter IGBT part (per 1/4 module) Inverter FWDi part (per 1/4 module) Converter IGBT part Converter FWDi upper part Converter FWDi lower part Case to fin, (per 1 module) Thermal grease applied (Note-1) (Note-1) (Note-1) (Note-1) (Note-1) (Note-1) Min. — — — — — — Limits Typ. — — — — — — Max. 0.32 0.53 0.32 0.33 0.53 0.038 Unit Junction to case Thermal Resistances °C/W Contact Thermal Resistance (Note-1) Tc (under the chip) measurement point is below. (unit : mm) arm axis X Y UP IGBT FWDi 31.2 33.6 4.5 –7.5 VP IGBT FWDi 66.0 66.0 0.6 –8.6 WP FWDi 85.8 –3.1 UN IGBT FWDi 41.6 40.5 0.0 8.0 VN IGBT FWDi 56.2 56.2 –5.5 2.7 WN IGBT FWDi 76.3 76.3 –6.5 2.7 Bottom view ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Condition VD = 15V, IC = 75A VCIN = 0V (Fig. 1) –IC = 75A, VD = 15V, VCIN = 15V VD = 15V, VCIN = 0V↔15V VCC = 300V, IC = 75A Tj = 125°C Inductive Load VCE = VCES, VCIN = 15V (Fig. 5) Tj = 25°C Tj = 125°C (Fig. 2) Min. — — — 0.3 — — — — — — Limits Typ. 1.7 1.55 2.2 0.7 0.1 0.2 0.9 0.2 — — Max. 2.3 2.0 3.3 1.4 0.2 0.4 1.8 0.4 1 10 Unit V V Switching Time µs (Fig. 3,4) Tj = 25°C Tj = 125°C Collector-Emitter Cutoff Current mA Oct. 2005 MITSUBISHI PM75B5LA060 FLAT-BASE TYPE INSULATED PACKAGE CONVERTER PART Symbol VCE(sat) VEC VFM ton trr tc(on) toff tc(off) ICES Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Forward Voltage Condition VD = 15V, IC = 75A VCIN = 0V, Pulsed (Fig. 1) –IC = 7.


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