Silicon N-Channel MOS FET
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RQA0009SXAQS
Silicon N-Channel MOS FET
REJ03G1566-0100 Rev.1.00 Jul 04, 2007
Features
• High Outpu...
Description
www.DataSheet4U.com
RQA0009SXAQS
Silicon N-Channel MOS FET
REJ03G1566-0100 Rev.1.00 Jul 04, 2007
Features
High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) Compact package capable of surface mounting Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4)
Outline
RENESAS Package code: PLZZ0004CA-A (Package Name : UPAK R )
3
3
2
1
1
4
1. Gate 2. Source 3. Drain 4. Source
2, 4
Note:
Marking is “SX”. *UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: Value at Tc = 25°C Symbol VDSS VGSS ID Pchnote Tch Tstg Ratings 16 ±5 3.2 15 150 –55 to +150 Unit V V A W °C °C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 1 of 12
RQA0009SXAQS
Electrical Characteristics
(Ta = 25°C)
Item Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward Transfer Admittance Input capacitance Output capacitance Reverse transfer capacitance Output Power Power Added Efficiency Output Power Power Added Efficiency Symbol IDSS IGSS VGS(off) |yfs| Ciss Coss Crss Pout PAE Pout PAE Min. — — 0.15 — — — — — — — — — — Typ — — 0.5 3.2 76 40 3.5 37.8 6.0 65 35.2 3.3 60 Max. 15 ±2 0.8 — — — — — — — — — — Unit µ...
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