64K X 16-Bit Low Power CMOS Static RAM
KM6161000B Family
Document Title
64K x16 bit Low Power CMOS Static RAM
Revision History
Revision No. History
0.0 Initial...
Description
KM6161000B Family
Document Title
64K x16 bit Low Power CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
1.0 Finalize - One datasheet for commercial and industrial part.
2.0 Revised - Change datasheet format. - Remove Icc write current value. - Remove low power product from product
CMOS SRAM
Draft Data
August 12, 1995 April 15, 1996
Remark
Preliminary
Final
February 12, 1998 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 2.0
February 1998
KM6161000B Family
CMOS SRAM
64K x16 bit Low Power CMOS Static RAM
FEATURES SUMMARY
Process Technology : Poly Load Organization : 64K x16 Data Byte Control : LB=I/O1~8, UB=I/O9~16 Power Supply Voltage : 4.5~5.5V Low Data Retention Voltage : 2V(Min) Three state output and TTL Compatible Package Type : 44-TSOP2-400F/R
GENERAL DESCRIPTION
The KM6161000B families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range Speed(ns)
KM6161000BL-L...
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