Document
www.DataSheet4U.com
GFB75N03
N-Channel Enhancement-Mode MOSFET
H C N t E ET c u R d T ENF ro P G New
®
VDS 30V RDS(ON) 6.5mΩ ID 80A
D
TO-263AB
0.380 (9.65) 0.420 (10.67) 0.21 (5.33) Min.
D
G
0.160 (4.06) 0.190 (4.83)
0.045 (1.14) 0.055 (1.40)
S
0.42 (10.66)
0.320 (8.13) 0.360 (9.14)
G PIN D S
0.575 (14.60) 0.625 (15.88)
0.055 (1.39) 0.066 (1.68)
Dimensions in inches and (millimeters)
0.63 (17.02)
0.33 (8.38)
Seating Plate
-T0.096 (2.43) 0.102 (2.59) 0.027 (0.686) 0.037 (0.940)
0.120 (3.05) 0.155 (3.94)
0.014 (0.35) 0.020 (0.51) 0.100 (2.54) 0.130 (3.30)
0.08 (2.032) 0.24 (6.096) 0.12 (3.05)
Mounting Pad Layout
Mechanical Data
Case: JEDEC TO-263 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 1.3g
Features
• Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (T
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TA = 25°C TA = 100°C Symbol VDS VGS ID IDM PD TJ, Tstg TL RθJC
(2)
C
= 25°C unless otherwise noted)
Limit 30 ± 20 80 240 69.4 27.8 –55 to 150 275 1.8 40
Unit V
A W °C °C °C/W °C/W 5/1/01
Operating Junction and Storage Temperature Range Lead Temperature (1/8” from case for 5 sec.) Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance
RθJA
Notes: (1) Maximum DC current limited by the package (2) 1-in2 2oz. Cu PCB mounted
www.DataSheet4U.com
GFB75N03
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics (T
Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance(1) Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Body Leakage On-State Drain Current
(1) (1)
J
= 25°C unless otherwise noted)
Symbol
Test Condition VGS = 0V, ID = 250µA VGS = 10V, ID = 38A VGS = 4.5V, ID = 31A VDS = VGS, ID = 250µA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VDS ≥ 5V, VGS = 10V VDS = 15V, ID = 38A
Min
Typ
Max
Unit
BVDSS RDS(on) VGS(th) IDSS IGSS ID(on) gfs
30 – – 1.0 – – 75 –
– 5.8 8.5 – – – – 61
– 6.5 9.5 3.0 1.0 ±100 – –
V mΩ V µA nA A S
Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
VDS=15V, ID=38A, VGS=5V VDS = 15V, VGS = 10V ID = 38A
– – – – –
32.5 63 11 11 13 16 94 38 3240 625 285
46 90 – – 26 29 132 57 – – – pF ns nC
VDD = 15V, RL = 15Ω ID ≅ 1A, VGEN = 10V RG = 6Ω VDS = 15V, VGS = 0V f = 1.0MHZ
– – – – – –
Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage
Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%
IS VSD
– IS = 38A.