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Preliminary data
SPN01N60S5
Cool MOS
Power-Transistor
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Optimized capacitances Improved noise immunity
C O OLMO S
Power Semiconductors
Product Summary VDS @ Tjmax RDS(on) ID
SOT-223
ì
650 6 0.3
V A
í î ï
ÊÐÍðëïêí
Type SPN01N60S5
Package SOT-223
Ordering Code Q67040-S4208
Marking 01N60S5
G,1
D,2/4
S,3
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current TA = 25 °C Reverse diode dv/dt IS = 0.3 A, VDS