High Speed NOVRAM
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APPLICATION NOTE A V A I LABLE
AN56
High Speed NOVRAM
FEATURES • Fast access time: 35ns • High rel...
Description
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APPLICATION NOTE A V A I LABLE
AN56
High Speed NOVRAM
FEATURES Fast access time: 35ns High reliability —Endurance: 105 nonvolatile store operations —Retention: 10 years minimum Power-on recall —EEPROM data automatically recalled into RAM upon power-up Low power CMOS —Standby: 1mA Infinite EEPROM array recall, and RAM read and write cycles Hardware store initiation (store cycle time < 10ms) Available in the 32-lead plastic leadless chip carrier package DESCRIPTION
X20CZ16
The Xicor X20CZ16 is a 2K x 8 NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM (EEPROM). The X20CZ16 is fabricated with advanced CMOS floating gate technology to achieve high speed with low power and wide power-supply margin. The NOVRAM design allows data to be easily transferred from RAM to EEPROM (store) and EEPROM to RAM (recall). The store operation is completed in 10ms or less and the recall operation is completed in 20µs or less. An automatic array recall operation reloads the contents of the EEPROM into RAM upon power-up. Xicor NOVRAMS are designed for unlimited write operations to RAM, either from the host or recalls from EEPROM, and a minimum 100,000 store operations to the EEPROM. Data retention is specified to be greater than 10 years.
FUNCTIONAL DIAGRAM
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10
et
e
P
EEPROM Array
O R
ro
E EC AL L
du
Store/ Recall Control
Address Decoder
ol
SRAM Array
bs
DQ0 DQ1 DQ2 DQ3...
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