20CZ16

www.DataSheet4U.com APPLICATION NOTE A V A I LABLE AN56 High Speed NOVRAM FEATURES Fast access time: 35ns High reliability —Endurance: 105 nonvolatile store operations —Retention: 10 years minimum Power-on recall —EEPROM data automatically recalled into RAM upon power-up Low power CMOS —Standby: 1mA Infinite EEPROM array recall, and RAM read and write cycles Hardware store initiation (store cycle time < 10ms) Available in the 32-lead plastic leadless chip carrier package DESCRIPTION X20CZ16 The Xicor X20CZ16 is a 2K x 8 NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM (EEPROM). The X20CZ16 is fabricated with advanced CMOS floating gate technology to achieve high speed with low power and wide power-supply margin. The NOVRAM design allows data to be easily transferred from RAM to EEPROM (store) and EEPROM to RAM (recall). The store operation is completed in 10ms or less and the recall operation is completed in 20µs or less. An automatic array recall operation reloads the contents of the EEPROM into RAM upon power-up. Xicor NOVRAMS are designed for unlimited write operations to RAM, either from the host or recalls from EEPROM, and a minimum 100,000 store operations to the EEPROM. Data retention is specified to be greater than 10 years. FUNCTIONAL DIAGRAM A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 et e P EEPROM Array O R ro E EC AL L du Store/ Recall Control Address Decoder ol SRAM Array bs DQ0 DQ1 DQ2 DQ3...