MIP289

www.DataSheet4U.com (IPD) MIP289 MOS I , IPD 150 µA , , , IPD 1 2 3 4 6.3±0.2 Unit : mm +0 0.25 –0.05 MOSFET CMOS , 9.4±0.3 8 7 5 .10 7.62±0.25 3.4±0.3 3.80±0.25 2.54±0.25 AC (∼ 60 W) 0.5±0.1 1.2±0.25 (2,3,7PIN) I Ta = 25°C ± 3°C VD VB VF ID IDP Tch Tstg 700 7 5 280 420 150 −55 ∼ +150 V V V mA mA °C °C : MIP289 I 1 5 Max Duty Clock S 4 R Q 2 (3, 7, 8) GND 0.6+0.25 –0.10 I 1 : Bypass 2 : Source 3 : Source 0.4±0.1 4 : FB 0.6±0.1 (1,4,5,8PIN) 5 : Drain 7 : Source 8 : Source DIP-8-A1(CF) Package 3 to 15° 1 MIP289 www.DataSheet4U.com I TC = 25°C ± 2°C (IPD) fOSC MAXDC IFB IHYS VFB VCC IS Ich IFBO VUV ILIMIT * * * * FB : Open FB : Open 40 65 −85 −18 44 68 −50 −12 1.5 5.8 180 160 2.5 1.5 48 71 −30 −5 1.9 6.1 300 280 kHz % µA µA V V µA mA IFB = −25 µA VBypass = VCC + 0.2 V, VFB = 0 V VBypass = VCC + 0.2 V, FB : Open VBypass = 0 V VBypass = 4.0 V VFB = 0 V 1.1 5.4 90 70 −75 4.7 −40 5.1 −20 5.5 µA V 0.230 0.255 200 100 0.280 A ns ns °C °C ton(BLK) td(OCL) TOTP ∆OTP RDS(ON) IDSS VDSS tr tf VD(min) 50 (3 cm × 3 cm) Ta = 25°C ID = 25 mA VBypass = 6.5 V, VFB = 0 V, VDS = 650 V VBypass = 6.5 V, VFB = 0 V, ID = 100 µA 700 130 140 70 150 31.2 36.0 0.25 Ω mA V 100 40 ns ns V 90 °C/W * Rth(j-a) ) 1. 2. * : I 1 4 Pin2, 3, 7, 8 5 2 www.DataSheet4U.com (1) (2) (3) — ( ) — (4) ( ) (5) (6) ) (7) ( IPD (1) (2) Power Integrations ( ) IPD (3) (4) ( ) (1), (2) IPD (3) MIP501~MIP511, MIP704~MIP709 MIP805 IPD IPD ( ) IPD IPD M...