Document
SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES High Capacitance Ratio : C1V/C4V =2.0(Typ.) Low Series Resistance : rs=0.39 (Typ.)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature
VR Tj
Storage Temperature Range
Tstg
RATING 10 150
-55 150
UNIT V
KDV273UL
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
C
A
B
H E
G E
H D 1. ANODE 2. CATHODE
DIM MILLIMETERS
A 1.0 +_ 0.05
B 0.6 +_ 0.05
C
0.36
+0.02 - 0.03
D 0.5 +_ 0.03
E 0.25 +_0.03
G 0.65+_ 0.03
H 0.05
ULP-2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Reverse Current
IR
Capacitance
C1V C4V
Capacitance Ratio
K
Series Resistance
rS
TEST CONDITION IR=1 A VR=10V VR=1V, f=1MHz VR=4V, f=1MHz
VR=1V, f=470MHz
MIN. 10 15 7.3 1.8 -
TYP. 16 8.0 2.0
0.39
MAX. 10 17 8.7 0.5
UNIT V nA
pF
Marking
Type Name
VB
2007. 5. 16
Revision No : 0
1/2
CAPACITANCE CT (pF) REVERSE CURRENT I R (pA)
KDV273UL
C T - VR
100 f=1MHz Ta=25 C
10
1 0 1 2 3 4 5 6 7 8 9 10 REVERSE VOLTAGE VR (V)
1K Ta=25 C
IR - VR
100
10
1 0 2 4 6 8 10 12 REVERSE VOLTAGE VR (V)
2007. 5. 16
Revision No : 0
2/2
.