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IRFN054

International Rectifier

POWER MOSFET N-CHANNEL

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International Rectifier

IRFN054

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Description
Previous Datasheet www.DataSheet4U.com Index Next Data Sheet Provisional Data Sheet No. PD-9.1543A HEXFET® POWER MOSFET 60 Volt, 0.020 Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance. HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. The Surface Mount Device (SMD-1) package represents another step in the continual evolution of surface mount technology. The SMD-1 will give designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the SMD-1 package to meet the specific needs of the power market by increasing the size of the termination pads, thereby enhancing thermal and electrical performance. IRFN054 N-CHANNEL Product Summary Part Number IRFN054 BV DSS 60V RDS(on) 0.020Ω ID 55A* Features: s s s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C I D @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR E...




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